Journal ArticleDOI
High-performance ZnO transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °C
Yen-Hung Lin,Hendrik Faber,Kui Zhao,Qingxiao Wang,Aram Amassian,Martyn A. McLachlan,Thomas D. Anthopoulos +6 more
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TLDR
An aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm(2) /Vs at temperatures <180 °C.Abstract:
An aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm(2) /Vs at temperatures <180 °C. Because of its low temperature requirements the method allows processing of high-performance transistors onto temperature sensitive substrates such as plastic.read more
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Metal oxides for optoelectronic applications
TL;DR: This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin- film transistors, solar cells, diodes and memories.
Journal ArticleDOI
Metal oxide semiconductor thin-film transistors for flexible electronics
Luisa Petti,Niko Munzenrieder,Niko Munzenrieder,Christian Vogt,Hendrik Faber,Lars Büthe,Giuseppe Cantarella,Francesca Bottacchi,Thomas D. Anthopoulos,Gerhard Tröster +9 more
TL;DR: Flexible metal oxide semiconductor thin-film transistors (TFTs) are considered the most promising technology for tomorrow's electronics as discussed by the authors and are therefore considered to be a promising technology in the field of flexible electronics.
Journal ArticleDOI
High- k Gate Dielectrics for Emerging Flexible and Stretchable Electronics
Binghao Wang,Binghao Wang,Wei Huang,Lifeng Chi,Mohammed Al-Hashimi,Tobin J. Marks,Antonio Facchetti +6 more
TL;DR: This review summarizes and analyzes recent advances in materials concepts as well as in thin-film fabrication techniques for high- k gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductor types.
Journal ArticleDOI
High-performance flexible perovskite solar cells exploiting Zn2SnO4 prepared in solution below 100 °C.
Seong Sik Shin,Woon Seok Yang,Jun Hong Noh,Jae Ho Suk,Nam Joong Jeon,Jonghoon Park,Ju Seong Kim,Won Mo Seong,Sang Il Seok +8 more
TL;DR: The introduction of the ZSO film significantly improves transmittance of flexible polyethylene naphthalate/indium-doped tin oxide (PEN/ITO)-coated substrate from ∼75 to ∼90% over the entire range of wavelengths, rendering ZSO a promising candidate as electron-conducting electrode for the highly efficient flexible PSC applications.
References
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Journal ArticleDOI
Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing
TL;DR: Combustion processing is now reported as a new low-temperature route for the deposition of diverse metal oxide films, and high-performance transistors are demonstrated using this method as discussed by the authors.
Journal ArticleDOI
Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films
Yong-Hoon Kim,Jae Sang Heo,Taehyeong Kim,Sungjun Park,Myung-Han Yoon,Jiwan Kim,Min Suk Oh,Gi-Ra Yi,Yong-Young Noh,Sung Kyu Park +9 more
TL;DR: Deep-ultraviolet irradiation induces efficient condensation and densification of oxide semiconducting films by photochemical activation at low temperature, which is applicable to numerous metal-oxide semiconductors, and the performance (in terms of transistor mobility and operational stability) of thin-film transistors fabricated by this route compares favourably with that ofthin- film transistors based on thermally annealed materials.
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Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process
Kulbinder K. Banger,Yoshihisa Yamashita,Kiyotaka Mori,Rebecca L. Peterson,Rebecca L. Peterson,Timothy J. Leedham,J. Rickard,Henning Sirringhaus +7 more
TL;DR: The formation of amorphous metal oxide semiconducting thin-films using a ‘sol–gel on chip’ hydrolysis approach from soluble metal alkoxide precursors affords unprecedented high field-effect mobilities, reproducible and stable turn-on voltages Von≈0 V and high operational stability at maximum process temperatures as low as 230 °C.
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Solution-processed zinc oxide field-effect transistors based on self-assembly of colloidal nanorods.
Baoquan Sun,Henning Sirringhaus +1 more
TL;DR: By controlling the shape of the nanocrystals from spheres to rods the semiconducting properties of spin-coated ZnO films can be much improved as a result of increasing particle size and self-alignment of thenanorods along the substrate.