P. M. Rice

TL;DR: In this paper, exchange biased magnetic tunnel junction (MTJ) structures are shown to have useful properties for forming magnetic memory storage elements in a novel cross-point architecture, which exhibit very large magnetoresistive (MR) values exceeding 40% at room temperature, with specific resistance values ranging down to as little as ∼60 Ω(μm)2.

TL;DR: In this article, the magnitude of Neel coupling due to interface roughness in a series of magnetic tunneling junction devices was measured using both magnetometry and transport measurements, and the results were shown to be in good agreement with the theoretical model.

TL;DR: Experimental results show that a novel AD based on Cu-ion motion in novel Cu-containing Mixed Ionic Electronic Conduction (MIEC) materials provide the ultra-high current densities needed for PCM, exhibit high ON/OFF ratios with excellent uniformity, are highly scalable, and are compatible with <400°C Back-End-Of-the-Line (BEOL) fabrication.

TL;DR: In this article, the first demonstration of CMOS-integrated racetrack memory was reported, which is complete memory cells integrated into the back end of line of IBM 90 nm CMOS.