Eugene J. O'Sullivan

TL;DR: In this paper, exchange biased magnetic tunnel junction (MTJ) structures are shown to have useful properties for forming magnetic memory storage elements in a novel cross-point architecture, which exhibit very large magnetoresistive (MR) values exceeding 40% at room temperature, with specific resistance values ranging down to as little as ∼60 Ω(μm)2.

TL;DR: In this paper, the basic physics of spin torque switching in 20"nm diameter magnetic tunnel junctions with perpendicular magnetic anisotropy materials were demonstrated, which clearly indicates the STT MRAM device itself may be suitable for integration at much higher densities than previously proven.

TL;DR: In this article, a process for electrolessly depositing cobalt-tin alloys with adjustable tin contents from 1 to over 25 atomic percent tin is described, which is useful in the electronics and computer industries for device, chip interconnection and packaging applications.

TL;DR: A damascene interconnect containing a dual etch stop/diffusion barrier is described in this article. But the authors do not consider the use of metal diffusion barrier in this paper.

TL;DR: In this article, a method of selectively seeding or activating metal interconnections patterned on polyimide dielectric surfaces using an aqueous solution of palladium sulfate, palladium perchlorate or trifluoromethane sulfonate was proposed.