Journal ArticleDOI
Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy
M. Gajek,Janusz J. Nowak,Jonathan Z. Sun,P. L. Trouilloud,Eugene J. O'Sullivan,D. W. Abraham,Michael C. Gaidis,Guohan Hu,S. Brown,Yu Zhu,R. P. Robertazzi,William J. Gallagher,Daniel C. Worledge +12 more
TLDR
In this paper, the basic physics of spin torque switching in 20"nm diameter magnetic tunnel junctions with perpendicular magnetic anisotropy materials were demonstrated, which clearly indicates the STT MRAM device itself may be suitable for integration at much higher densities than previously proven.Abstract:
Spin-transfer torque magnetic random access memory (STT-MRAM) is one of the most promising emerging non-volatile memory technologies. MRAM has so far been demonstrated with a unique combination of density, speed, and non-volatility in a single chip, however, without the capability to replace any single mainstream memory. In this paper, we demonstrate the basic physics of spin torque switching in 20 nm diameter magnetic tunnel junctions with perpendicular magnetic anisotropy materials. This deep scaling capability clearly indicates the STT MRAM device itself may be suitable for integration at much higher densities than previously proven.read more
Citations
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Journal ArticleDOI
Neuromorphic computing with nanoscale spintronic oscillators
Jacob Torrejon,Mathieu Riou,Flavio Abreu Araujo,Sumito Tsunegi,Guru Khalsa,Damien Querlioz,P. Bortolotti,Vincent Cros,Kay Yakushiji,Akio Fukushima,Hitoshi Kubota,Shinji Yuasa,Mark D. Stiles,Julie Grollier +13 more
TL;DR: In this article, a magnetic tunnel junction (MTJ) was used to achieve spoken-digit recognition with an accuracy similar to that of state-of-the-art neural networks.
Journal ArticleDOI
Interface-induced phenomena in magnetism
Frances Hellman,Axel Hoffmann,Yaroslav Tserkovnyak,Geoffrey S. D. Beach,Eric E. Fullerton,Chris Leighton,Allan H. MacDonald,Daniel C. Ralph,Dario Arena,Hermann A. Dürr,Peter Fischer,Julie Grollier,Joseph P. Heremans,Tomas Jungwirth,Tomas Jungwirth,Alexey Kimel,B Bert Koopmans,Ilya Krivorotov,Steven J. May,Amanda K. Petford-Long,James M. Rondinelli,Nitin Samarth,Ivan K. Schuller,Ivan K. Schuller,Andrei Slavin,Mark D. Stiles,Oleg Tchernyshyov,André Thiaville,Barry L. Zink +28 more
TL;DR: This article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking at interfaces, identifying the most exciting new scientific results and pointing to promising future research directions.
Journal ArticleDOI
Spintronics based random access memory: a review
Sabpreet Bhatti,Rachid Sbiaa,Atsufumi Hirohata,Hideo Ohno,Shunsuke Fukami,S. N. Piramanayagam +5 more
TL;DR: This article reviews spintronics based memories, in particular, magnetic random access memory (MRAM) in a systematic manner and discusses some of the future technologies that might help the industry to move beyond the conventional MRAM technology.
Journal ArticleDOI
Spin-torque building blocks
TL;DR: By assembling magnetic nanodevices as building blocks with different functionalities, novel types of computing architecture can be envisaged, focus in particular on recent concepts such as magnonics and spintronic neural networks.
Journal ArticleDOI
Basic principles of STT-MRAM cell operation in memory arrays
Alexey Vasilyevitch Khvalkovskiy,Dmytro Apalkov,Steven M. Watts,R Chepulskii,Robert Beach,Adrian E. Ong,X. Tang,A. Driskill-Smith,William H. Butler,P. B. Visscher,D. K. Lottis,Eugene Chen,Vladimir Nikitin,Mohamad Towfik Krounbi +13 more
TL;DR: The fundamental physical principles of STT-MRAM operation are discussed, covering the range from device level to chip array performance, and methodology for its development.
References
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Current-driven excitation of magnetic multilayers
TL;DR: In this paper, a new mechanism was proposed for exciting the magnetic state of a ferromagnet, where a transfer of vectorial spin accompanied an electric current flowing perpendicular to two parallel magnetic films connected by a normal metallic spacer.
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A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
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TL;DR: Inter interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ is used by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane an isotropy.
Journal ArticleDOI
Current-induced magnetization reversal in nanopillars with perpendicular anisotropy
Stéphane Mangin,Dafiné Ravelosona,Jordan A. Katine,Matthew J. Carey,Bruce D. Terris,Eric E. Fullerton +5 more
TL;DR: In this paper, the authors describe an experimental demonstration of current-induced magnetic reversal of nanopillars with perpendicular anisotropy and high coercive fields, and the best results are observed for Co/Ni multilayers, which have higher giant magnetoresistance values and spin-torque efficiencies than Co/Pt multilayer.
Journal ArticleDOI
Spin-current interaction with a monodomain magnetic body: A model study
TL;DR: In this paper, the authors examined the consequence of spin-current-induced angular momentum deposition in a monodomain Stoner-Wohlfarth magnetic body using the Landau-Lifshitz-Gilbert equation with a phenomenological damping coefficient.