Showing papers by "Michael S. Fuhrer published in 2018"

Room temperature in-plane ferroelectricity in van der Waals In2Se3

Abstract: Van der Waals (vdW) assembly of layered materials is a promising paradigm for creating electronic and optoelectronic devices with novel properties. Ferroelectricity in vdW layered materials could enable nonvolatile memory and low-power electronic and optoelectronic switches, but to date, few vdW ferroelectrics have been reported, and few in-plane vdW ferroelectrics are known. We report the discovery of in-plane ferroelectricity in a widely investigated vdW layered material, β'-In2Se3. The in-plane ferroelectricity is strongly tied to the formation of one-dimensional superstructures aligning along one of the threefold rotational symmetric directions of the hexagonal lattice in the c plane. Surprisingly, the superstructures and ferroelectricity are stable to 200°C in both bulk and thin exfoliated layers of In2Se3. Because of the in-plane nature of ferroelectricity, the domains exhibit a strong linear dichroism, enabling novel polarization-dependent optical properties.

Electric-field-tuned topological phase transition in ultrathin Na3Bi.

Abstract: The electric-field-induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor1-4. In this scheme, 'on' is the ballistic flow of charge and spin along dissipationless edges of a two-dimensional quantum spin Hall insulator5-9, and 'off' is produced by applying an electric field that converts the exotic insulator to a conventional insulator with no conductive channels. Such a topological transistor is promising for low-energy logic circuits4, which would necessitate electric-field-switched materials with conventional and topological bandgaps much greater than the thermal energy at room temperature, substantially greater than proposed so far6-8. Topological Dirac semimetals are promising systems in which to look for topological field-effect switching, as they lie at the boundary between conventional and topological phases3,10-16. Here we use scanning tunnelling microscopy and spectroscopy and angle-resolved photoelectron spectroscopy to show that mono- and bilayer films of the topological Dirac semimetal3,17 Na3Bi are two-dimensional topological insulators with bulk bandgaps greater than 300 millielectronvolts owing to quantum confinement in the absence of electric field. On application of electric field by doping with potassium or by close approach of the scanning tunnelling microscope tip, the Stark effect completely closes the bandgap and re-opens it as a conventional gap of 90 millielectronvolts. The large bandgaps in both the conventional and quantum spin Hall phases, much greater than the thermal energy at room temperature (25 millielectronvolts), suggest that ultrathin Na3Bi is suitable for room-temperature topological transistor operation.

Long range intrinsic ferromagnetism in two dimensional materials and dissipationless future technologies

Abstract: The inherent susceptibility of low-dimensional materials to thermal fluctuations has long been expected to pose a major challenge to achieve intrinsic long-range ferromagnetic order in two-dimensional materials. The recent explosion of interest in atomically thin materials and their assembly into van der Waals heterostructures has renewed interest in two-dimensional ferromagnetism, which is interesting from a fundamental scientific point of view and also offers a missing ingredient necessary for the realization of spintronic functionality in van der Waals heterostructures. Recently, several atomically thin materials have been shown to be robust ferromagnets. Such ferromagnetism is thought to be enabled by magnetocrystalline anisotropy which suppresses thermal fluctuations. In this article, we review recent progress in two-dimensional ferromagnetism in detail and predict new possible two-dimensional ferromagnetic materials. We also discuss the prospects for applications of atomically thin ferromagnets in novel dissipationless electronics, spintronics, and other conventional magnetic technologies. Particularly, atomically thin ferromagnets are promising to realize time reversal symmetry breaking in two-dimensional topological systems, providing a platform for electronic devices based on the quantum anomalous Hall effect showing dissipationless transport. Our proposed directions will assist the scientific community to explore novel two-dimensional ferromagnetic families which can spawn new technologies and further improve the fundamental understanding of this fascinating area.

Long Range Intrinsic Ferromagnetism in Two Dimensional Materials and Dissipationless Future Technologies

Abstract: The inherent susceptibility of low-dimensional materials to thermal fluctuations has long been expected to poses a major challenge to achieving intrinsic long-range ferromagnetic order in two-dimensional materials. The recent explosion of interest in atomically thin materials and their assembly into van der Waals heterostructures has renewed interest in two-dimensional ferromagnetism, which is interesting from a fundamental scientific point of view and also offers a missing ingredient necessary for the realization of spintronic functionality in van der Waals heterostructures. Recently several atomically thin materials have been shown to be robust ferromagnets. Such ferromagnetism is thought to be enabled by magneto crystalline anisotropy which suppresses thermal fluctuations. In this article, we review recent progress in two-dimensional ferromagnetism in detail and predict new possible two-dimensional ferromagnetic materials. We also discuss the prospects for applications of atomically thin ferromagnets in novel dissipationless electronics, spintronics, and other conventional magnetic technologies. Particularly atomically thin ferromagnets are promising to realize time reversal symmetry breaking in two-dimensional topological systems, providing a platform for electronic devices based on the quantum anomalous Hall Effect showing dissipationless transport. Our proposed directions will assist the scientific community to explore novel two-dimensional ferromagnetic families which can spawn new technologies and further improve the fundamental understanding of this fascinating area.

Thermoelectric properties and performance of flexible reduced graphene oxide films up to 3,000 K

Abstract: The development of ultrahigh-temperature thermoelectric materials could enable thermoelectric topping of combustion power cycles as well as extending the range of direct thermoelectric power generation in concentrated solar power. However, thermoelectric operation temperatures have been restricted to under 1,500 K due to the lack of suitable materials. Here, we demonstrate a thermoelectric conversion material based on high-temperature reduced graphene oxide nanosheets that can perform reliably up to 3,000 K. After a reduction treatment at 3,300 K, the nanosheet film exhibits an increased conductivity to ~4,000 S cm−1 at 3,000 K and a high power factor S2σ = 54.5 µW cm−1 K−2. We report measurements characterizing the film’s thermoelectric properties up to 3,000 K. The reduced graphene oxide film also exhibits a high broadband radiation absorbance and can act as both a radiative receiver and a thermoelectric generator. The printable, lightweight and flexible film is attractive for system integration and scalable manufacturing. The Carnot efficiency and the power output of thermoelectric power generation increase with temperature but current thermoelectrics are characterized up to 1,500 K. Here, Li et al. develop reduced graphene oxide films that can convert heat up to 3,000 K with high power factors, opening the door for novel applications.

Electric Field-Tuned Topological Phase Transition in Ultra-Thin Na3Bi - Towards a Topological Transistor

Abstract: The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic flow of charge and spin along dissipationless edges of the two-dimensional (2D) quantum spin Hall insulator [5-9], and when 'off' is a conventional insulator with no conductive channels. Such as topological transistor is promising for low-energy logic circuits [4], which would necessitate electric field-switched materials with conventional and topological bandgaps much greater than room temperature, significantly greater than proposed to date [6-8]. Topological Dirac semimetals(TDS) are promising systems in which to look for topological field-effect switching, as they lie at the boundary between conventional and topological phases [3,10-16]. Here we use scanning probe microscopy/spectroscopy (STM/STS) and angle-resolved photoelectron spectroscopy (ARPES) to show that mono- and bilayer films of TDS Na3Bi [3,17] are 2D topological insulators with bulk bandgaps >400 meV in the absence of electric field. Upon application of electric field by doping with potassium or by close approach of the STM tip, the bandgap can be completely closed then re-opened with conventional gap greater than 100 meV. The large bandgaps in both the conventional and quantum spin Hall phases, much greater than the thermal energy kT = 25 meV at room temperature, suggest that ultrathin Na3Bi is suitable for room temperature topological transistor operation.

Selective Control of Surface Spin Current in Topological Materials based on Pyrite-type OsX2 (X = Se, Te) Crystals

Abstract: Topological materials host robust surface states, which could form the basis for future electronic devices. As such states have spins that are locked to the momentum, they are of particular interest for spintronic applications. Understanding spin textures of the surface states of topologically nontrivial materials, and being able to manipulate their polarization, is therefore essential if they are to be utilized in future technologies. Here we use first-principles calculations to show that pyrite-type crystals OsX2 (X= Se, Te) are a class of topological material that can host surface states with spin polarization that can be either in-plane or out-of-plane. We show that the formation of low-energy states with symmetry-protected energy- and direction-dependent spin textures on the (001) surface of these materials is a consequence of a transformation from a topologically trivial to nontrivial state, induced by spin orbit interactions. The unconventional spin textures of these surface states feature an in-plane to out-of-plane spin polarization transition in the momentum space protected by local symmetries. Moreover, the surface spin direction and magnitude can be selectively filtered in specific energy ranges. Our demonstration of a new class of topological material with controllable spin textures provide a platform for experimentalists to detect and exploit unconventional surface spin textures in future spin-based nanoelectronic devices.

Designing Optoelectronic Properties by On-Surface Synthesis: Formation and Electronic Structure of an Iron–Terpyridine Macromolecular Complex

Abstract: Supramolecular chemistry protocols applied on surfaces offer compelling avenues for atomic-scale control over organic–inorganic interface structures. In this approach, adsorbate–surface interactions and two-dimensional confinement can lead to morphologies and properties that differ dramatically from those achieved via conventional synthetic approaches. Here, we describe the bottom-up, on-surface synthesis of one-dimensional coordination nanostructures based on an iron (Fe)-terpyridine (tpy) interaction borrowed from functional metal–organic complexes used in photovoltaic and catalytic applications. Thermally activated diffusion of sequentially deposited ligands and metal atoms and intraligand conformational changes lead to Fe–tpy coordination and formation of these nanochains. We used low-temperature scanning tunneling microscopy and density functional theory to elucidate the atomic-scale morphology of the system, suggesting a linear tri-Fe linkage between facing, coplanar tpy groups. Scanning tunneling s...

Pyrite-type OsX2 (X = Se, Te) Crystals: A Novel Topological Material for Selective Control of Surface Spin Current

Abstract: Understanding spin textures of the surface states of topologically nontrivial materials is essential for realizing their potential for applications such as spintronics. Here we propose the existence of symmetry-protected energy- and direction-dependent surface spin textures on the (001) surface of pyrite-type crystals OsX2 (X= Se, Te) using first principles calculations. We show that the formation of these low-energy states is a consequence of a transformation from a topologically trivial to nontrivial state induced by spin orbit interactions. The unconventional spin textures of these surface states feature an in-plane to out-of-plane spin polarization transition in the momentum space. Moreover, The surface spin direction and magnitude can be selectively filtered in specific energy ranges. In addition, we have observed the existence of three-dimensional nodal lines in these crystals surviving the spin orbit coupling effect. Our findings are expected to provide new avenues for experimentalists to detect the surface spin textures in topologically nontrivial materials and can reveal new insights to designing novel spin-based nanoelectronic devices.

Terahertz detection in 2D materials

Abstract: The terahertz (THz) region of the electromagnetic spectrum, broadly defined as between 300 GHz and 30 THz, is of growing importance in fields as diverse as communications, medicine, astronomy, security, biology and materials science. Despite this, the technologies for detection of THz radiation are still comparatively immature. The most sensitive THz detectors are typically slow and require cryogenic cooling, and conversely the fastest detectors lack the sensitivity to measure weak signals. We describe here recent work to employ new two-dimensional (2D) materials for the detection of THz waves.