Michael Winters

TL;DR: High-performance graphene field-effect transistors (GFETs) with a thin AlOx gate dielectric which outperform previous state-of-the-art GFETs are demonstrated and offer the prospect of using graphene in a much wider range of electronic applications which require substantial gain.

TL;DR: In this paper, the electrical properties of Al2O3 films grown on 4H-SiC by successive thermal oxidation of thin Al layers at low temperatures (200°C - 300°C) were reported.

TL;DR: In this paper, self-switching diodes (SSDs) were fabricated on as-grown and hydrogen-intercalated epitaxial graphene on SiC and characterized as zero-bias detectors with on-wafer measurements from 1 to 67 GHz.

TL;DR: In this article, Van der Pauw et al. demonstrated a technique for the measurement of the electron velocity versus electric field on as-grown and H-intercalated graphene.

TL;DR: In this article, quasi-free-standing monolayer and bilayer graphene is grown on homoepitaxial layers of 4H-SiC and the epilayers themselves are grown on the Si-face of nominally on-axis semi-insulating substrates using a conventional SiC hot-wall chemical vapor deposition reactor.