Microfabricated integrated circuits revolutionized computation by vastly reducing the space, labor, and time required for calculations. Microfluidic systems hold similar promise for the large-scale automation of chemistry and biology, suggesting the possibility of numerous experiments performed rapidly and in parallel, while consuming little reagent. While it is too early to tell whether such a vision will be realized, significant progress has been achieved, and various applications of significant scientific and practical interest have been developed. Here a review of the physics of small volumes (nanoliters) of fluids is presented, as parametrized by a series of dimensionless numbers expressing the relative importance of various physical phenomena. Specifically, this review explores the Reynolds number Re, addressing inertial effects; the Peclet number Pe, which concerns convective and diffusive transport; the capillary number Ca expressing the importance of interfacial tension; the Deborah, Weissenberg, and elasticity numbers De, Wi, and El, describing elastic effects due to deformable microstructural elements like polymers; the Grashof and Rayleigh numbers Gr and Ra, describing density-driven flows; and the Knudsen number, describing the importance of noncontinuum molecular effects. Furthermore, the long-range nature of viscous flows and the small device dimensions inherent in microfluidics mean that the influence of boundaries is typically significant. A variety of strategies have been developed to manipulate fluids by exploiting boundary effects; among these are electrokinetic effects, acoustic streaming, and fluid-structure interactions. The goal is to describe the physics behind the rich variety of fluid phenomena occurring on the nanoliter scale using simple scaling arguments, with the hopes of developing an intuitive sense for this occasionally counterintuitive world.

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Microfluidics: Fluid physics at the nanoliter scale

Microfluidic devices for manipulating fluids are widespread and finding uses in many scientific and industrial contexts. Their design often requires unusual geometries and the interplay of multiple physical effects such as pressure gradients, electrokinetics, and capillarity. These circumstances lead to interesting variants of well-studied fluid dynamical problems and some new fluid responses. We provide an overview of flows in microdevices with focus on electrokinetics, mixing and dispersion, and multiphase flows. We highlight topics important for the description of the fluid dynamics: driving forces, geometry, and the chemical characteristics of surfaces.

Engineering flows in small devices

We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO 3 (ZnO) 5 , as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of ∼10 6 and a field-effect mobility of ∼80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.

http://science.sciencemag.org/content/sci/300/5623/1269.full.pdf

Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

In this chapter, we will restrict our attention to the ferrites and a few other closely related materials. The great interest in ferrites stems from their unique combination of a spontaneous magnetization and a high electrical resistivity. The observed magnetization results from the difference in the magnetizations of two non-equivalent sub-lattices of the magnetic ions in the crystal structure. Materials of this type should strictly be designated as “ferrimagnetic” and in some respects are more closely related to anti-ferromagnetic substances than they are to ferromagnetics in which the magnetization results from the parallel alignment of all the magnetic moments present. We shall not adhere to this special nomenclature except to emphasize effects, which are due to the existence of the sub-lattices.

Ferromagnetic materials

Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Operation is demonstrated of a field‐effect transistor made of transparant oxidic thin films, showing an intrinsic memory function due to the usage of a ferroelectric insulator. The device consists of a high mobility Sb‐doped n‐type SnO2 semiconductor layer, PbZr0.2Ti0.8O3 as a ferroelectric insulator, and SrRuO3 as a gate electrode, each layer prepared by pulsed laser deposition. The hysteresis behavior of the channel conductance is studied. Using gate voltage pulses of 100 μs duration and a pulse height of ±3 V, a change of a factor of two in the remnant conductance is achieved. The dependence of the conductance on the polarity of the gate pulse proves that the memory effect is driven by the ferroelectric polarization. The influence of charge trapping is also observed and discussed.

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A ferroelectric transparent thin‐film transistor

We derive a model for voltage-induced wetting, so-called electrowetting, from the principle of virtual displacement. Our model includes the possibility that charge is trapped in or on the wetted su...

Reversible electrowetting and trapping of charge : model and experiments

We demonstrate control of fluid motion in three-dimensional structures with thousands of microchannels. Fluids are manipulated via an electrocapillary pressure, originating from electrostatic control of the solid/fluid interfacial tension in the microchannels. Reversible fluid displacement has been achieved for all channel orientations with respect to gravity. The velocities of several centimeters per second are nearly two orders of magnitude higher than the velocities demonstrated by other electrofluidic actuation principles.

https://science.sciencemag.org/content/sci/291/5502/277.full.pdf

Fluid control in multichannel structures by electrocapillary pressure.

Thin-film ferroelectric capacitors consisting of PbZr0.53Ti0.47O3 sandwiched between La0.5Sr0.5CoO3 electrodes have been deposited using pulsed laser deposition. The combination of oxidic perovskite-type materials results in capacitors with a coercive field (Ec) which is comparable with values for bulk ceramics. Textured thin-film capacitors with a columnar microstructure show lower switching voltages than epitaxial films. No thickness dependence of Ec and a good endurance up to 1011 cycles have been observed for epitaxial as well as textured capacitors with oxidic electrodes. In contrast, capacitors with a metallic top electrode show an increase of Ec with decreasing thickness of the ferroelectric layer. We show that charge injection can explain the experimentally observed increase of Ec with decreasing ferroelectric layer thickness. An overview is given of the growth conditions needed for PbZr0.53Ti0.47O3 films, because the precise stoichiometry is of the utmost importance for the capacitor quality.

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Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition

fcc Co on Cu(001) and multilayers of Cu/Co/Cu(001) are studied by magnetization induced SHG (MSHG) in combination with linear Kerr measurements, for thicknesses between 1 and 20 monolayers (ML). Interface sensitivity of MSHG is demonstrated by its Co thickness dependency. Aside from a weak modulation, the MSHG signal from Co/Cu is nearly constant for thicknesses between 6 and 20 ML. Very strong oscillations in the MSHG signal are found for the Cu/Co/Cu system as a function of the thickness of the Cu coverlayer, which are possibly related to quantum well states in these thin Cu films.

/pdf/interface-magnetism-and-possible-quantum-well-oscillations-57pfa8tx38.pdf

Mwj Menno Prins

Papers

A ferroelectric transparent thin‐film transistor

Reversible electrowetting and trapping of charge : model and experiments

Fluid control in multichannel structures by electrocapillary pressure.

Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition

Interface magnetism and possible quantum well oscillations in ultrathin Co/Cu films observed by magnetization induced second harmonic generation.