N. Fasarakis

TL;DR: An analytical drain current model for undoped (or lightly doped) short-channel triple-gate fin-shaped field effect transistors (finFETs) is presented in this article.

TL;DR: An analytical compact model for the threshold voltage Vt of double-gate (DG) and tri-Gate (TG) FinFETs is proposed and the Vt model has been validated by developing a Verilog-A code and comparing the results derived by the Spectre simulator and the Verilogs A code with simulation results.

TL;DR: In this paper, an analytical compact model for the drain current of undoped or lightly doped nanoscale FinFETs with trapezoidal cross section is proposed, and the model has been validated by comparing the results with those of 3D numerical device simulations.

TL;DR: In this paper, simple analytical models for the front and back gate threshold voltages and ideality factors with back gate control of lightly doped short channel fully depleted silicon-on-insulator ultrathin body and buried oxide thickness MOSFETs have been developed based on the minimum value of the back surface potentials.

TL;DR: In this article, the authors investigated the origin of low-frequency noise in n-channel fin-shaped field effect transistors (FinFETs) in terms of channel length and fin width.