N
Nicolas Bologna
Researcher at Swiss Federal Laboratories for Materials Science and Technology
Publications - 17
Citations - 213
Nicolas Bologna is an academic researcher from Swiss Federal Laboratories for Materials Science and Technology. The author has contributed to research in topics: Nanowire & Epitaxy. The author has an hindex of 7, co-authored 17 publications receiving 181 citations. Previous affiliations of Nicolas Bologna include Polytechnic University of Milan & Masdar Institute of Science and Technology.
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Journal ArticleDOI
High-Mobility GaSb Nanostructures Cointegrated with InAs on Si
Mattias Borg,Heinz Schmid,Johannes Gooth,Marta D. Rossell,Marta D. Rossell,Davide Cutaia,Moritz Knoedler,Nicolas Bologna,Nicolas Bologna,Stephan Wirths,Kirsten E. Moselund,Heike Riel +11 more
TL;DR: A process that enables cointegration of GaSb and InAs nanostructures in close vicinity on Si, a preferred material combination ideally suited for high-performance complementary III-V metal-oxide-semiconductor technology.
Journal ArticleDOI
Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy
Moritz Knoedler,Nicolas Bologna,Nicolas Bologna,Heinz Schmid,Mattias Borg,Mattias Borg,Kirsten E. Moselund,Stephan Wirths,Marta D. Rossell,Marta D. Rossell,Heike Riel +10 more
TL;DR: In this article, a template-assisted selective epitaxy (TASE) method was proposed to reduce defects due to lattice mismatch in Si-based Complementary-Metal-Oxide-Semiconductor (CMOS) technology.
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Manipulating Surface States of III–V Nanowires with Uniaxial Stress
G. Signorello,Saurabh Sant,Nicolas Bologna,M. Schraff,Ute Drechsler,Heinz Schmid,Stephan Wirths,Marta D. Rossell,Andreas Schenk,Heike Riel +9 more
TL;DR: Results reveal that strain technology can be used to shift surface states away from energy ranges in which device performance is negatively affected and represent a novel route to engineer the electronic properties of III-V devices.
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Ballistic one-dimensional transport in InAs nanowires monolithically integrated on silicon
Johannes Gooth,Vanessa Schaller,Stephan Wirths,Heinz Schmid,Mattias Borg,Nicolas Bologna,Nicolas Bologna,Siegfried Karg,Heike Riel +8 more
TL;DR: In this paper, a monolithic integration and electrical characterization of InAs nanowires (NWs) with the well-defined geometries and positions on Si is presented as a platform for quantum transport studies.
Journal ArticleDOI
Dopant-Induced Modifications of GaxIn(1–x)P Nanowire-Based p–n Junctions Monolithically Integrated on Si(111)
Nicolas Bologna,Nicolas Bologna,Stephan Wirths,Luca Francaviglia,Marco Campanini,Heinz Schmid,Vasileios Theofylaktopoulos,Kirsten E. Moselund,Anna Fontcuberta i Morral,Rolf Erni,Heike Riel,Marta D. Rossell,Marta D. Rossell +12 more
TL;DR: The first monolithic integration of Ga xIn(1- x)P vertical nanowires, and the associated p-n junctions, on silicon by the Au-free template-assisted selective epitaxy (TASE) method is reported, demonstrating that TASE allows for a high chemical homogeneity of ternary alloys through thenanowires.