K
Kirsten E. Moselund
Researcher at IBM
Publications - 157
Citations - 2658
Kirsten E. Moselund is an academic researcher from IBM. The author has contributed to research in topics: Silicon & Nanowire. The author has an hindex of 26, co-authored 148 publications receiving 2157 citations. Previous affiliations of Kirsten E. Moselund include École Polytechnique Fédérale de Lausanne & École Normale Supérieure.
Papers
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Journal ArticleDOI
Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si
Heinz Schmid,Mattias Borg,Kirsten E. Moselund,Lynne Gignac,Chris Breslin,John Bruley,Davide Cutaia,Heike Riel +7 more
TL;DR: In this article, a template-assisted selective epitaxy (TASE) was used to construct 3D stacked nanowires and multiple gate field effect transistors (MuG-FETs) co-planar to the SOI layer.
Journal ArticleDOI
Vertical III-V nanowire device integration on Si(100).
Mattias Borg,Heinz Schmid,Kirsten E. Moselund,G. Signorello,Lynne Gignac,John Bruley,Chris Breslin,Pratyush Das Kanungo,Peter Werner,Heike Riel +9 more
TL;DR: In this paper, complementary metal-oxide-semiconductor (CMOS)-compatible integration of compound semiconductors on Si substrates was reported. And the results indicated a high uniformity and scalability in the fabrication process.
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InAs–Si Nanowire Heterojunction Tunnel FETs
TL;DR: In this paper, a vertical InAs-Si nanowire heterojunction tunnel FET is presented, which achieves high Ion/Ioff ratios above 106, with an Ion of 2.4 μA/μm and an inverse sub-threshold slope of 150 mV/dec measured over three decades of current.
Journal ArticleDOI
Si-InAs heterojunction Esaki tunnel diodes with high current densities
M. T. Bjork,Heinz Schmid,Cedric D Bessire,Kirsten E. Moselund,H. Ghoneim,Siegfried Karg,Emanuel Lörtscher,Heike Riel +7 more
TL;DR: In this paper, Si-InAs heterojunction p-n diodes were fabricated by growing InAs nanowires in oxide mask openings on silicon substrates, from which a valence band offset between Si and InAs of 130 meV was extracted.
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High-speed III-V nanowire photodetector monolithically integrated on Si.
Svenja Mauthe,Yannick Baumgartner,Marilyne Sousa,Qian Ding,Marta D. Rossell,Marta D. Rossell,Andreas Schenk,Lukas Czornomaz,Kirsten E. Moselund +8 more
TL;DR: In this article, the authors demonstrate in-plane monolithic integration of an InGaAs nanostructure p-i-n photodetector on Si capable of high-speed optical data reception at 32 Gbps enabled by a 3 dB bandwidth exceeding 25 GHz.