M
Martin Heiss
Researcher at École Polytechnique Fédérale de Lausanne
Publications - 35
Citations - 3186
Martin Heiss is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Nanowire & Molecular beam epitaxy. The author has an hindex of 25, co-authored 35 publications receiving 2970 citations. Previous affiliations of Martin Heiss include Technische Universität München.
Papers
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Journal ArticleDOI
Single-nanowire solar cells beyond the Shockley-Queisser limit
Peter Krogstrup,H. I. Jørgensen,Martin Heiss,Oliver Demichel,Jeppe V. Holm,Martin Aagesen,Jesper Nygård,Anna Fontcuberta i Morral +7 more
TL;DR: In this article, a single core-shell p-i-n junction GaAs nanowire solar cell grown on a silicon substrate was shown to achieve a short-circuit current of 180 mA cm-2 at 1 sun illumination, more than one order of magnitude higher than that predicted from the Lambert-Beer law.
Journal ArticleDOI
Self-assembled quantum dots in a nanowire system for quantum photonics
Martin Heiss,Yannik Fontana,Anders Gustafsson,Gunter Wüst,César Magén,David D. O'Regan,Jun-Wei Luo,Bernt Ketterer,Sonia Conesa-Boj,Andreas V. Kuhlmann,Julien Houel,Eleonora Russo-Averchi,Joan Ramon Morante,Joan Ramon Morante,Marco Cantoni,Nicola Marzari,Jordi Arbiol,Alex Zunger,Richard J. Warburton,A. Fontcuberta i Morral +19 more
TL;DR: This work presents a versatile quantum-dot-in-nanowire system that reproducibly self-assembles in core-shell GaAs/AlGaAs nanowires and shows that the origin of the optical transitions lies in quantum confinement due to Al-rich barriers.
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Impact of surfaces on the optical properties of GaAs nanowires
TL;DR: In this article, the effect of surfaces on the optical properties of GaAs nanowires is evidenced by comparing Nanowires with or without an AlGaAs capping shell as a function of the diameter.
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Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
Martin Heiss,Martin Heiss,Sonia Conesa-Boj,Sonia Conesa-Boj,Jun Ren,Hsiang-Han Tseng,Adam Gali,Andreas Rudolph,Emanuele Uccelli,Emanuele Uccelli,Francesca Peiró,Joan Ramon Morante,Dieter Schuh,Elisabeth Reiger,Efthimios Kaxiras,Jordi Arbiol,Anna Fontcuberta i Morral,Anna Fontcuberta i Morral +17 more
TL;DR: In this paper, a method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported, which is consistent with a band gap of 1.5 eV.
Journal ArticleDOI
Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis
Maria de la Mata,César Magén,Jaume Gazquez,Muhammad Iqbal Bakti Utama,Martin Heiss,Sergei Lopatin,Florian Furtmayr,Florian Furtmayr,Carlos J. Fernández-Rojas,Carlos J. Fernández-Rojas,Bo Peng,Joan Ramon Morante,Riccardo Rurali,Martin Eickhoff,Anna Fontcuberta i Morral,Qihua Xiong,Jordi Arbiol,Jordi Arbiol +17 more
TL;DR: The proposed experimental via opens new routes for the fine characterization of nanostructures, e.g., in electronic and optoelectronic fields, where the polarity is crucial for the understanding of their physical properties as well as their growth mechanisms.