P
Patrick Ong
Researcher at Katholieke Universiteit Leuven
Publications - 34
Citations - 703
Patrick Ong is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Chemical-mechanical planarization & Shallow trench isolation. The author has an hindex of 15, co-authored 34 publications receiving 639 citations. Previous affiliations of Patrick Ong include IMEC.
Papers
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Journal ArticleDOI
InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates
Niamh Waldron,Clement Merckling,Lieve Teugels,Patrick Ong,Sheik Ansar Usman Ibrahim,Farid Sebaai,Ali Pourghaderi,Kathy Barla,Nadine Collaert,Aaron Thean +9 more
TL;DR: In this paper, the first InGaAs gate-all-around (GAA) nanowire devices fabricated on 300mm Si substrates were presented, which achieved an extrinsic GAA flow rate of 1030~\mu \) S \(/\mu m at 0.5
Proceedings ArticleDOI
Highly uniform and low-loss passive silicon photonics devices using a 300mm CMOS platform
Shankar Kumar Selvaraja,Peter De Heyn,Gustaf Winroth,Patrick Ong,Guy Lepage,Celine Cailler,Arnaud Rigny,Konstantin Bourdelle,Wim Bogaerts,Dries Van Thourhout,Joris Van Campenhout,Philippe Absil +11 more
TL;DR: Using an advanced 300mm CMOS-platform, record-low and highly-uniform propagation loss is reported: 0.45±0.12dB/cm for wires, and 2dB/ cm for slot waveguides.
Proceedings ArticleDOI
An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates
Niamh Waldron,Clement Merckling,W. Guo,Patrick Ong,Lieve Teugels,S. Ansar,Diana Tsvetanova,Farid Sebaai,D. H. van Dorp,Alexey Milenin,D. Lin,Laura Nyns,Jerome Mitard,Ali Pourghaderi,Bastien Douhard,O. Richard,Hugo Bender,Guillaume Boccardi,Matty Caymax,M.M. Heyns,Wilfried Vandervorst,Kathy Barla,Nadine Collaert,A. V-Y. Thean +23 more
TL;DR: In this article, a Si-IIIV hybrid 300mm R&D pilot line is demonstrated with InGaAs FinFETs with a SS of 190 mV/dec and extrinsic gm of 558 μS/μm for an EOT of 1.9nm, L g of 50nm and fin width of 55nm.
Journal ArticleDOI
Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique
Niamh Waldron,Gang Wang,Ngoc Duy Nguyen,Tommaso Orzali,Clement Merckling,Guy Brammertz,Patrick Ong,G. Winderickx,Geert Hellings,Geert Eneman,Matty Caymax,Marc Meuris,Naoto Horiguchi,Aaron Thean +13 more
Proceedings ArticleDOI
193nm immersion lithography for high-performance silicon photonic circuits
Shankar Kumar Selvaraja,Gustaf Winroth,S. Locorotondo,Gayle Murdoch,Alexey Milenin,Christie Delvaux,Patrick Ong,Shibnath Pathak,Weiqiang Xie,Gunther Sterckx,Guy Lepage,Dries Van Thourhout,Wim Bogaerts,Joris Van Campenhout,Philippe Absil +14 more
TL;DR: A modified 28nm- STI-like patterning platform for silicon photonics in 300mm Silicon-On-Insulator wafer technology and demonstrates superior performance both in terms of dimensional uniformity and device functionality compared to 248nm- or standard 193nmbased patterning in high-volume manufacture platform.