C
Christie Delvaux
Researcher at IMEC
Publications - 20
Citations - 234
Christie Delvaux is an academic researcher from IMEC. The author has contributed to research in topics: Resist & Photolithography. The author has an hindex of 8, co-authored 20 publications receiving 212 citations. Previous affiliations of Christie Delvaux include Katholieke Universiteit Leuven.
Papers
More filters
Proceedings ArticleDOI
A 0.314/spl mu/m/sup 2/ 6T-SRAM cell build with tall triple-gate devices for 45nm applications using 0.75NA 193nm lithography
Axel Nackaerts,Monique Ercken,Steven Demuynck,A. Lauwers,C. Baerts,Hugo Bender,W. Boulaert,Nadine Collaert,B. Degroote,Christie Delvaux,J.-F. de Marneffe,Abhisek Dixit,K. De Meyer,Eric Hendrickx,Nancy Heylen,Patrick Jaenen,David Laidler,S. Locorotondo,Mireille Maenhoudt,M. Moelants,Ivan Pollentier,Kurt G. Ronse,Rita Rooyackers,J. van Aelst,Geert Vandenberghe,Wilfried Vandervorst,T. Vandeweyer,S. Vanhaelemeersch,M. A. Van Hove,J. Van Olmen,S. Verhaegen,J. Versluijs,Christa Vrancken,Vincent Wiaux,M. Jurczak,S. Biesemans +35 more
TL;DR: In this paper, the authors describe the fabrication process of a fully working 6T-SRAM cell of 0.314/spl mu/m/sup 2/ build with tall triple gate (TTG) devices.
Proceedings ArticleDOI
193nm immersion lithography for high-performance silicon photonic circuits
Shankar Kumar Selvaraja,Gustaf Winroth,S. Locorotondo,Gayle Murdoch,Alexey Milenin,Christie Delvaux,Patrick Ong,Shibnath Pathak,Weiqiang Xie,Gunther Sterckx,Guy Lepage,Dries Van Thourhout,Wim Bogaerts,Joris Van Campenhout,Philippe Absil +14 more
TL;DR: A modified 28nm- STI-like patterning platform for silicon photonics in 300mm Silicon-On-Insulator wafer technology and demonstrates superior performance both in terms of dimensional uniformity and device functionality compared to 248nm- or standard 193nmbased patterning in high-volume manufacture platform.
Proceedings Article
Advanced 300-mm waferscale patterning for silicon photonics devices with record low loss and phase errors
Shankar Kumar Selvaraja,Gayle Murdoch,Alexey Milenin,Christie Delvaux,Patrick Ong,Shibnath Pathak,Diedrik Vermeulen,Gunther Sterckx,Gustaf Winroth,Peter Verheyen,Guy Lepage,Wim Bogaerts,Roel Baets,Joris Van Campenhout,Philippe Absil +14 more
TL;DR: In this paper, the authors demonstrate record low-loss waveguides, sub-wavelength photonic crystal fiber-chip couplers and high-resolution patterning in 300 mm SOI wafers fabricated using 45 nm mask technology, state-of-the-art 193 nm immersion lithography and an ICP-RIE process.
Journal ArticleDOI
Invited) Vertical Nanowire FET Integration and Device Aspects
Anabela Veloso,Efrain Altamirano-Sanchez,Stephan Brus,Boon Teik Chan,Miroslav Cupak,Morin Dehan,Christie Delvaux,Katia Devriendt,Geert Eneman,M. Ercken,Trong Huynh-Bao,Tsvetan Ivanov,Philippe Matagne,C Merckling,Vasile Paraschiv,Siva Ramesh,Erik Rosseel,Luc Rynders,Arturo Sibaja-Hernandez,Samuel Suhard,Zheng Tao,E. Vecchio,Niamh Waldron,D. Yakimets,Kristin De Meyer,Dan Mocuta,Nadine Collaert,Aaron Thean +27 more
TL;DR: This work reports on vertical nanowire FET devices (VNWFETs) with a gate-all-around (GAA) configuration, which offer new, promising opportunities to enable further CMOS scaling and increased layout efficiency.
Proceedings ArticleDOI
Demonstration of scaled 0.099µm 2 FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology
Anabela Veloso,Steven Demuynck,Monique Ercken,Anne-Marie Goethals,S. Locorotondo,Frederic Lazzarino,E. Altamirano,C. Huffman,A. De Keersgieter,S. Brus,M. Demand,Herbert Struyf,J. De Backer,Jan Hermans,Christie Delvaux,Bart Baudemprez,Tom Vandeweyer,F. Van Roey,C. Baerts,D. Goossens,Harold Dekkers,Patrick Ong,Nancy Heylen,K. Kellens,Henny Volders,Andriy Hikavyy,C. Vrancken,Michal Rakowski,Staf Verhaegen,Mircea Dusa,L. Romijn,C. Pigneret,A. Van Dijk,R. Schreutelkamp,A. Cockburn,Virginie Gravey,Hans Meiling,Bas Hultermans,Sjoerd Lok,Kavita Shah,R. Rajagopalan,Jerry Gelatos,Olivier Richard,Hugo Bender,Geert Vandenberghe,G. Beyer,Philippe Absil,T. Y. Hoffmann,Kurt G. Ronse,Serge Biesemans +49 more
TL;DR: In this paper, the authors demonstrate electrically functional 0.099µm2 6T-SRAM cells using full-field EUV lithography for contact and M1 levels.