Patrick S. Goley

TL;DR: In this paper, structural and electrical characteristics of epitaxial germanium (Ge) heterogeneously integrated on silicon (Si) via a composite, large bandgap AlAs/GaAs buffer are investigated.

TL;DR: Broken-gap InAs/GaSb strain balanced multilayer structures were grown by molecular beam epitaxy (MBE), and their structural, morphological, and band alignment properties were analyzed to demonstrate desirable characteristics of mixed As/Sb material systems for high-performance and low-power tunnel field-effect transistor applications.

TL;DR: In this article, the impacts of heavy ion induced radial ionization profiles in integrated silicon photonic waveguides are investigated, and 3D finite-difference time-domain simulations are used to ascertain transmission characteristics through a variety of ionisation profiles.

TL;DR: Strain and band gap engineered epitaxial germanium (e-Ge) quantum-well (QW) laser structures were investigated theoretically and experimentally for the first time in this article.

TL;DR: In this article, a 10-keV X-ray source was used to investigate total ionizing dose effects in p-i-n germanium photodiodes (PDs) from a monolithic electronic-photonic integrated circuit technology.