Paul S. Ho

TL;DR: In this article, the thermal stress in the TSV structure was measured by the wafer curvature method and its unique stress characteristics were compared to that of a Cu thin film structure, and the importance and implication of the local plasticity and residual stress on TSV reliabilities were discussed for TSV extrusion and device keep-out zone (KOZ).

TL;DR: In this article, a technique for the fast determination of stress in Al thin films in the presence of SiO2 passivation or line patterning was developed and used to investigate triaxial and biaxial stress states.

TL;DR: In this paper, stress relaxation experiments were performed on a molding compound in the time domain and Prony series expansion was used to express the material's relaxation behavior, and a Thermo-rheologically simple model was assumed to deduce the master curve of relaxation modulus using the timetemperature equivalence assumption.

TL;DR: In this article, the authors examined how low-energy ions change the chemical composition at and near their interface and found that the amount of chemical binding between the titanium nitride and dielectric is increased when low energy ions are used.

TL;DR: In this article, a method of fabricating a silicon nanowire having a width of 100 nm or less by depositing a metal film on a silicon-containing layer, treating the metal film using a wet process to produce an interconnected metal network having gaps on the silicon containing layer, and etching the siliconcontaining layer with a metal-assisted etching process to form a silicon nano-wires having width of 50 nm or more.