P
Paul S. Ho
Researcher at University of Texas at Austin
Publications - 481
Citations - 14016
Paul S. Ho is an academic researcher from University of Texas at Austin. The author has contributed to research in topics: Electromigration & Dielectric. The author has an hindex of 60, co-authored 475 publications receiving 13444 citations. Previous affiliations of Paul S. Ho include National Institute of Standards and Technology & IBM.
Papers
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Grain Boundary Diffusion in NiFe/Ag Bilayer Thin Films
TL;DR: In this paper, the grain boundary diffusivity of Ag through Ni80Fe20 is characterized by a diffusion coefficient prefactor of 0.9 cm2/sec and an activation energy, Ea,gb, of 2.2 eV.
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Critical and Sub-critical Debonding in Nano-clustering Porous Low-k Films
TL;DR: In this article, the authors investigated the nature of the adhesive strength of nano-clustered silica by critical and sub-critical fracture and Fourier Transform IR Spectroscopy (FTIR).
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In-situ XPS Study of ALD Ta(N) Barrier Formation on Organosilicate Dielectric Surface
TL;DR: In this paper, a pre-treatment of the low k surface with radical beams, particularly with nitrogen radicals, was found to enhance significantly the chemisorption of the TaCl5 precursor on the OSG surfaces.
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Nanoporous Materials Integration Into Advanced Microprocessors
E. Todd Ryan,Cathy Labelle,Satya V. Nitta,Nicholas C. M. Fuller,Griselda Bonilla,Kenneth J. McCullough,Charles J. Taft,Hong Lin,Andrew H. Simon,Eva E. Simonyi,Kelly Malone,Muthumanickam Sankarapandian,Derren N. Dunn,M. Zaitz,Steve Cohen,N. Klymko,Bum Ki Moon,Zijian Li,Shuang Li,Yushan Yan,Junjun Liu,Paul S. Ho +21 more
TL;DR: In this article, the authors present a review of research to maximize mechanical strength by engineering optimal pore structures, controlling trench bottom roughness induced by etching and understanding its relationship to pore size, repairing plasma damage using silylation chemistry, and sealing a nanoporous surface for barrier metal (liner) deposition.
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Electromigration in multilevel interconnects with polymeric low-k interlevel dielectrics
Patrick R. Justison,Ennis T. Ogawa,Paul S. Ho,Martin Gall,C. Capasso,D. Jawarani,J. T. Wetzel,Hisao Kawasaki +7 more
TL;DR: In this paper, the effect of two types of polymeric low-k materials on the electromigration (EM) behavior of multilevel Al(Cu) interconnects was investigated.