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Paul S. Ho
Researcher at University of Texas at Austin
Publications - 481
Citations - 14016
Paul S. Ho is an academic researcher from University of Texas at Austin. The author has contributed to research in topics: Electromigration & Dielectric. The author has an hindex of 60, co-authored 475 publications receiving 13444 citations. Previous affiliations of Paul S. Ho include National Institute of Standards and Technology & IBM.
Papers
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Proceedings ArticleDOI
Investigation of residual stress in wafer level interconnect structures induced by wafer processing
TL;DR: In this paper, a finite element analysis approach based on element birth and death technique was developed to simulate the wafer processing procedure and residual stress in wafer structures at each processing step was obtained.
Patent
Nickel-X/gold/nickel-X conductors for solid state devices where X is phosphorus, boron, or carbon
TL;DR: In this article, a lower thin film of nickel-X alloy was used as the conductive portion of a laminated conductor and a gold layer was added to the upper surface of the gold layer.
Book ChapterDOI
Chemistry, Microstructure, and Adhesion of Metal—Polymer Interfaces
TL;DR: The metal-insulator interfaces have to be designed with certain functional characteristics, particularly good chemical and adhesion properties, and it is important to understand these basic properties of the metal insulator interface as discussed by the authors.
Journal ArticleDOI
Statistical Analysis of Electromigration Lifetimes and Void Evolution for Cu Interconnects
M. Hauschildt,M. Hauschildt,Martin Gall,S. Thrasher,P. Justison,L. Michaelson,R. Hernandez,H. Kawasaki,Paul S. Ho,Paul S. Ho +9 more
TL;DR: In this article, the authors analyzed the lifetime statistics and void size distributions at various stages during EM testing on 0.18 μm wide Cu interconnects with tests terminated after specific amounts of resistance increases, or after a specified test time.
Journal ArticleDOI
Electromigration Reliability of Dual-Damascene Cu/Oxide Interconnects
Ennis T. Ogawa,V. Blaschke,Alex Bierwag,Ki-Don Lee,Hideki Matsuhashi,David Griffiths,A. N. Ramamurthi,Patrick R. Justison,Robert H. Havemann,Paul S. Ho +9 more
TL;DR: In this article, an electromigration study has determined the lifetime characteristics and failure mode of dual-damascene Cu/oxide interconnects at temperatures ranging between 200 and 325 °C at a current density of 1.0 MA/cm2.