Paul S. Ho

TL;DR: In this paper, it is argued that the kinetics of Cu-polyimide interdiffusion is determined by atomic diffusion of Cu and that chemical effects do not appear to play an important role.

TL;DR: In this article, the authors analyzed the near-surface stress distribution in a TSV structure based on a semi-analytic approach and finite element method, in comparison with micro-Raman measurements.

TL;DR: Advanced Interconnects for ULSI Technology as discussed by the authors is dedicated to the materials and methods which might be suitable replacements for copper/low-k interconnects and discusses a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects.

TL;DR: In this article, an experimental technique is presented to characterize thermal stresses in TSVs during thermal cycling based on curvature measurements of bending beam specimens, and finite element analysis is performed to determine the stress distribution and the effect of localized plasticity to account for TSV extrusion observed during annealing.

TL;DR: It was found that plastic deformation is localized within the Cu vias near the via/Si interface and may play an important role in TSV extrusion and the effect of thermal stresses on carrier mobility was investigated to evaluate the keep-out zone for logic devices near the TSVs.