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Paul W. Marshall
Researcher at Goddard Space Flight Center
Publications - 194
Citations - 5088
Paul W. Marshall is an academic researcher from Goddard Space Flight Center. The author has contributed to research in topics: Heterojunction bipolar transistor & Single event upset. The author has an hindex of 35, co-authored 194 publications receiving 4863 citations.
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Review of displacement damage effects in silicon devices
TL;DR: A historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices to provide a guide to displacement damage literature and to offer critical comments regarding that literature in an attempt to identify key findings.
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Correlation of Particle-Induced Displacement Damage in Silicon
TL;DR: In this paper, the effects of displacement damage caused in several types of silicon bipolar transistors by protons, deuterons, helium ions, and by 1 MeV equivalent neutrons were compared to calculations of nonionizing energy deposition in silicon as a function of particle type and energy.
Journal ArticleDOI
Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM
David F. Heidel,Paul W. Marshall,Jonathan A. Pellish,Kenneth P. Rodbell,Ken LaBel,J.R. Schwank,Stewart E. Rauch,Mark C. Hakey,Melanie D. Berg,C.M. Castaneda,Paul E. Dodd,M. Friendlich,A. Phan,Christina Seidleck,Marty R. Shaneyfelt,M.A. Xapsos +15 more
TL;DR: For the SOI SRAMs, a large MBU orientation effect is observed with most of the MBU events occurring along the same SRAM bit-line; allowing ECC circuits to correct most of theseMBU events.
Journal ArticleDOI
Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM
David F. Heidel,Paul W. Marshall,Ken LaBel,J.R. Schwank,Kenneth P. Rodbell,Mark C. Hakey,Melanie D. Berg,Paul E. Dodd,M. Friendlich,A. Phan,Christina Seidleck,Marty R. Shaneyfelt,M.A. Xapsos +12 more
TL;DR: In this paper, a 65 nm silicon-on-insulator (SOI) SRAM was used for single-event upsets (SEU) on a low energy proton SEU.
Journal ArticleDOI
Single event effects in circuit-hardened SiGe HBT logic at gigabit per second data rates
Paul W. Marshall,M.A. Carts,A.B. Campbell,Dale McMorrow,S. P. Buchner,R. Stewart,B.A. Randall,Barry K. Gilbert,Robert A. Reed +8 more
TL;DR: This attempt at circuit level single event effects (SEE) hardening of SiGe HBT logic provides the first reported indication of the level of sensitivity in this important technology.