Paul W. Marshall

TL;DR: A historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices to provide a guide to displacement damage literature and to offer critical comments regarding that literature in an attempt to identify key findings.

TL;DR: In this paper, the effects of displacement damage caused in several types of silicon bipolar transistors by protons, deuterons, helium ions, and by 1 MeV equivalent neutrons were compared to calculations of nonionizing energy deposition in silicon as a function of particle type and energy.

TL;DR: For the SOI SRAMs, a large MBU orientation effect is observed with most of the MBU events occurring along the same SRAM bit-line; allowing ECC circuits to correct most of theseMBU events.

TL;DR: In this paper, a 65 nm silicon-on-insulator (SOI) SRAM was used for single-event upsets (SEU) on a low energy proton SEU.

TL;DR: This attempt at circuit level single event effects (SEE) hardening of SiGe HBT logic provides the first reported indication of the level of sensitivity in this important technology.