P
Ping-Yi Hsieh
Researcher at National Tsing Hua University
Publications - 7
Citations - 38
Ping-Yi Hsieh is an academic researcher from National Tsing Hua University. The author has contributed to research in topics: Voltage regulator & Silicon. The author has an hindex of 2, co-authored 4 publications receiving 26 citations.
Papers
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Proceedings ArticleDOI
Monolithic 3D BEOL FinFET switch arrays using location-controlled-grain technique in voltage regulator with better FOM than 2D regulators
Ping-Yi Hsieh,Chien-Chi Huang,Ming-Chi Tai,Wei-Chung Lo,Chang-Hong Shen,Jia-Min Shieh,Da-Chiang Chang,Kuan-Neng Chen,Wen-Kuan Yeh,Chenming Hu,Yi-Jui Chang,Pin-Jun Chen,Chun-Liang Chen,Chih-Chao Yang,Po-Tsang Huang,Yi-Jing Chen,Chih-Ming Shen,Yu-Wei Liu +17 more
TL;DR: In this article, a 3D back-end of line (BEOL) FinFET switch arrays are demonstrated in large single crystalline Si islands (2.56 μm2), whose location, size and shape are determined by design.
Proceedings ArticleDOI
Footprint-efficient and power-saving monolithic IoT 3D + IC constructed by BEOL-compatible sub-10nm high aspect ratio (AR>7) single-grained Si FinFETs with record high Ion of 0.38 mA/μm and steep-swing of 65 mV/dec. and I on /I off ratio of 8
Chih-Chao Yang,Jia-Min Shieh,Tung-Ying Hsieh,Wen-Hsien Huang,Hsing-Hsiang Wang,Chang-Hong Shen,Fu-Kuo Hsueh,Ping-Yi Hsieh,Meng-Chyi Wu,Wen-Kuan Yeh +9 more
TL;DR: In this paper, a footprint-efficient and power-saving BEOL compatible 3D+IC carrying monolithic 3D stackable FinFETs and W interconnect were demonstrated by low thermal budget laser spike anneal technology.
Journal ArticleDOI
Single-Crystal Islands (SCI) for Monolithic 3-D and Back-End-of-Line FinFET Circuits
Yu-Wei Liu,Han-Wen Hu,Ping-Yi Hsieh,Hao-Tung Chung,Shu-Jui Chang,Jui-Han Liu,Po-Tsang Huang,Chih-Chao Yang,Chang-Hong Shen,Jia-Min Shieh,Kuan-Neng Chen,Chenming Hu +11 more
TL;DR: In this paper, a single-crystal islands (SCI) technique using low thermal budget pulse laser process is proposed and demonstrated to fabricate singlecrystal silicon islands over amorphous dielectric for monolithic 3D and back-end-of-line (BEOL) FinFET circuits.
Proceedings ArticleDOI
Crystal-Orientation-Tolerant Voltage Regulator using Monolithic 3D BEOL FinFETs in Single-Crystal Islands for On-Chip Power Delivery Network
Po-Tsang Huang,Yu-Wei Liu,Kuan-Fu Lai,Yun-Ping Lan,Tzung-Han Tsai,Bo-Jheng Shih,Ping-Yi Hsieh,Chih-Chao Yang,Chang-Hong Shen,Jia-Min Shieh,Da-Chiang Chang,Kuan-Neng Chen,Wen-Kuan Yeh,Chenming Hu +13 more
TL;DR: In this paper, a single-crystal-island (SCI) technique is demonstrated using low thermal budget pulse laser process to fabricate singlecrystal islands for monolithic 3D back-end-of-line (BEOL) FinFET circuits.
Journal ArticleDOI
Passivated Interfacial Traps of Monolayer MoS2 with Bipolar Electrical Pulse.
Po-Han Chen,Chun-An Chen,Yu-Ting Lin,Ping-Yi Hsieh,Meng-Hsi Chuang,Xiaoze Liu,Tung-Ying Hsieh,Chang-Hong Shen,Jiann Shieh,Meng-Chyi Wu,Yung-Fu Chen,Chih-Chao Yang,Yi-Hsien Lee +12 more
TL;DR: In this article , fundamental processes in excitation and relaxation of the photoresponse are studied and correlated with interfacial traps of the monolayer MoS2, and a mechanism for the onset of saturation photocurrent and the reset behavior in the Monolayer photodetector is illustrated based on device performances.