Proceedings ArticleDOI
Threshold voltage modeling of GaN based normally-off tri-gate transistor
Chandan Yadav,Pragya Kushwaha,Harshit Agarwal,Yogesh Singh Chauhan +3 more
- pp 1-4
TLDR
In this paper, a behavioral model of threshold voltage for normally off (enhancement mode) AlGaN/GaN based tri-gate HEMT is proposed, which captures strain relaxation with reduction in device width.Abstract:
In this paper, a behavioral model of threshold voltage for normally-off (enhancement mode) AlGaN/GaN based tri-gate HEMT is proposed. AlGaN/GaN based tri-gate HEMT devices have additional sidewall gates and show threshold voltage variation with decreasing device width. The proposed model captures strain relaxation with reduction in device width, which is one of the primary reason for change in V th in AlGaN/GaN tri-gate devices. Model shows excellent agreement with state-of-the-art experimental and simulation data.read more
Citations
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Journal ArticleDOI
Compact Physical Models for AlGaN/GaN MIS-FinFET on Threshold Voltage and Saturation Current
TL;DR: In this paper, the physical models for threshold voltage and drain saturation current of AlGaN/GaN MIS-FinFETs have been established and verified by TCAD simulation to provide guidelines for the GaN MIS and FinFET-based designs.
Journal ArticleDOI
Modelling of fin width dependent threshold voltage in fin shaped nano channel AlGaN/GaN HEMT
A. Chakrabarty,R. Swain +1 more
TL;DR: In this article, a theoretical model of threshold voltage for AlGaN/GaN fin shaped nano channel HEMT (FinHEMT) structure has been proposed, which can achieve enhancement mode operation with decreased fin width (Wfin).
Journal ArticleDOI
Modeling the Impact of Dynamic Fin-Width on the I– V, C– V and RF Characteristics of GaN Fin–HEMTs
TL;DR: In this article , the authors introduce an engineering approach to model the current and charge characteristics of an AlGaN/GaN Fin-HEMT, which handles the effective width of the 2DEG channel by considering its depletion due to the presence of gates on the sidewalls of the fin.
Proceedings ArticleDOI
Dependence of threshold voltage on doped layer thickness in AlGaN/GaN HEMT: An improved split donor E-mode design
TL;DR: In this article, the authors used an in-house built self-consistent Schrodinger-Poisson simulator to model the dependence of threshold voltage of HEMT on its doped layer thickness.
Journal ArticleDOI
Analytical Model for Gate Capacitance and Threshold Voltage in Fin-Shaped GaN HEMTs
TL;DR: In this article, side-gate capacitance of fin-shaped high electron mobility transistor (fin-HEMT) is estimated using conformal mapping technique, and a model is developed to estimate the threshold voltage of the device by incorporating this side gate capacitance in the existing threshold formulation.
References
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Journal ArticleDOI
AlGaN/GaN HEMTs-an overview of device operation and applications
TL;DR: This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems of the AlGaN/GaN high-electron mobility transistor.
Journal ArticleDOI
Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
TL;DR: In this article, a recessed-gate structure was proposed to realize normally off operation of high-voltage AlGaN/GaN high-electron mobility transistors (HEMTs) for power electronics applications.
Journal ArticleDOI
Recessed-gate enhancement-mode GaN HEMT with high threshold voltage
TL;DR: In this paper, an enhancement-mode high electron mobility transistors (E-HEMTs) on GaN/AlGaN heterostructures grown on SiC substrates are reported.
Journal ArticleDOI
Tri-Gate Normally-Off GaN Power MISFET
TL;DR: The tri-gate normally-off GaN on-Si field effect transistor (MISFET) was proposed in this paper, achieving a breakdown voltage of 565 V at a drain leakage current of 0.6 μA/mm and Vgs = 0.80 ± 0.06 V.
Journal ArticleDOI
An accurate charge control model for spontaneous and piezoelectric polarization dependent two-dimensional electron gas sheet charge density of lattice-mismatched AlGaN/GaN HEMTs
TL;DR: In this article, an improved charge control model for lattice mismatched AlGaN/GaN HEMTs is proposed, valid over the entire operating region, and the model for estimation of two-dimensional electron gas (2-DEG) sheet carrier concentration accounts for the strongly dominant spontaneous and piezoelectric polarization at the Al GaN/GAN heterointerface.