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Qianqian Huang
Researcher at Peking University
Publications - 150
Citations - 1327
Qianqian Huang is an academic researcher from Peking University. The author has contributed to research in topics: Transistor & Field-effect transistor. The author has an hindex of 15, co-authored 127 publications receiving 964 citations. Previous affiliations of Qianqian Huang include Information Technology Institute.
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Proceedings ArticleDOI
A novel Si tunnel FET with 36mV/dec subthreshold slope based on junction depleted-modulation through striped gate configuration
TL;DR: In this paper, a junction depleted-modulation design was proposed to achieve equivalently abrupt tunnel junction of Si tunnel FETs, which can reliably and effectively achieve much steeper switching behavior and higher ON current without area penalty and special fabrication compared with traditional TFET.
Journal ArticleDOI
A Comparative Study on the Impacts of Interface Traps on Tunneling FET and MOSFET
TL;DR: In this article, the impacts of interface traps on tunneling FET (TFET) are examined in terms of different trap energies and distributions, charge neutrality level (CNL), and effects of random trap fluctuation, in comparison with MOSFET.
Journal ArticleDOI
An Analytical Surface Potential Model Accounting for the Dual-Modulation Effects in Tunnel FETs
TL;DR: In this paper, an analytical model of the channel surface potential in the tunnel field effect transistors (TFETs) is established and verified, and the transition point corresponding to the switching between the two operating regimes is also analyzed quantitatively.
Journal ArticleDOI
A Novel Tunnel FET Design With Stacked Source Configuration for Average Subthreshold Swing Reduction
TL;DR: In this paper, a novel heterostacked tunnel FET (HS-TFET) is proposed for steeper average sub-threshold swing (SS), which owns a stacked source configuration consisting of an upper source layer with a relatively larger bandgap material and an underlying layer with smaller bandgap materials.
Proceedings ArticleDOI
Comprehensive performance re-assessment of TFETs with a novel design by gate and source engineering from device/circuit perspective
Qianqian Huang,Ru Huang,Chunlei Wu,Zhu Hao,Cheng Chen,Jiaxin Wang,Lingyi Guo,Runsheng Wang,Le Ye,Yangyuan Wang +9 more
TL;DR: In this paper, a pocket-mSTFET (PMS-TFET) is proposed and experimentally demonstrated by evaluating the performance from device metrics to circuit implementation for low-power SoC applications.