R.S. Williams

TL;DR: Highly sensitive and sequence-specific DNA sensors were fabricated based on silicon nanowires with single stranded probe DNA molecules covalently immobilized on the nanowire surfaces, recognizing label-free complementary ss-DNA in sample solutions when the target DNA was hybridized with the probe DNA attached on the SiNW surfaces.

TL;DR: In this article, observations of Ge island formation during growth on Si(001) by chemical vapor deposition from germane in the pressure range from 10 Torr to atmospheric pressure in a conventional epitaxial reactor are presented.

TL;DR: In this article, a predictive model for device behavior that can be used in simulations and to guide designs of memristors has been proposed for high density, low power, and high speed memory.

TL;DR: Simulation and initial experimental results demonstrate that performance of CMOS/memristor circuits for several important applications is well beyond scaling limits of conventional VLSI paradigm.

TL;DR: 4F2 selector-less crossbar array 2Mb ReRAM test chip with 54nm technology has been successfully integrated for high cell efficiency and high density memory applications by implementing parts of decoders to row/column lines directly under the cell area.