Rainer Jany

TL;DR: Tunnel spectroscopy with planar junctions is used to measure the behaviour of the electronic spectral density of states as a function of carrier density, implying that the smooth continuation of the superconducting gap into pseudogap-like behaviour could be a general property of 2D superconductivity.

TL;DR: To better understand the interface conductivity, scanning superconducting quantum interference device microscopy is used to image the magnetic field locally generated by current in an interface and finds that the current flowed in conductive narrow paths oriented along the crystallographic axes, embedded in a less conductive background.

TL;DR: The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO${3}$ and TiO$_{2}$-terminated SrTiO$³$ (STO) as discussed by the authors.

TL;DR: In this article, monolithically integrated n-type metal-oxide-semiconductor logic circuits are reported that utilize the two-dimensional electron liquid generated at the LaAlO3/SrTiO3 interface.

TL;DR: Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO3-SrTiO3 interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V.