S
S. Lavanga
Researcher at SELEX Sistemi Integrati
Publications - 27
Citations - 365
S. Lavanga is an academic researcher from SELEX Sistemi Integrati. The author has contributed to research in topics: Monolithic microwave integrated circuit & High-electron-mobility transistor. The author has an hindex of 9, co-authored 27 publications receiving 335 citations. Previous affiliations of S. Lavanga include Infineon Technologies.
Papers
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Journal ArticleDOI
Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs
Giovanni Verzellesi,L. Morassi,Gaudenzio Meneghesso,Matteo Meneghini,Enrico Zanoni,Gianmauro Pozzovivo,S. Lavanga,Thomas Detzel,Oliver Häberlen,Gilberto Curatola +9 more
TL;DR: In this article, the drain-source capacitance of double-field-plate power AlGaN/GaN HEMTs with C-doped buffers is modeled as a carbon doping mechanism.
Patent
Single voltage supply pseudomorphic high electron mobility transistor (PHEMT) power device and process for manufacturing the same
TL;DR: In this paper, a pseudomorphic high electron mobility transistor (PHEMT) power device with a semi-insulating substrate, an epitaxial substrate, and a contact layer is described.
Journal ArticleDOI
DC and RF performance of surface channel MESFETs on H-terminated polycrystalline diamond
P. Calvani,A. Corsaro,Marco Girolami,F. Sinisi,Daniele M. Trucchi,Maria Cristina Rossi,Gennaro Conte,S. Carta,E. Giovine,S. Lavanga,Ernesto Limiti,V. G. Ralchenko +11 more
TL;DR: In this paper, the performance of MESFETs fabricated on polycrystalline diamond was investigated in detail for different material electronic quality (grain size in the range 100-200 µm) and device geometry (drain-source channel length in the ranges 1-3µm).
Proceedings ArticleDOI
A 20 Watt Micro-strip X-Band AlGaN/GaN HPA MMIC for Advanced Radar Applications
C. Costrini,M. Calori,Antonio Cetronio,Claudio Lanzieri,S. Lavanga,Marco Peroni,Ernesto Limiti,Antonio Serino,Giovanni Ghione,G. Melone +9 more
TL;DR: In this article, a first iteration design, fabrication and test of a two-stage X-band MMIC HPA in micro-strip AlGaN/GaN technology is reported.
Journal ArticleDOI
Fabrication and nonlinear characterization of GaN HEMTs on SiC and sapphire for high‐power applications
Vittorio Camarchia,S. Donati Guerrieri,Marco Pirola,Valeria Teppati,Andrea Ferrero,Giovanni Ghione,Marco Peroni,P. Romanini,Claudio Lanzieri,S. Lavanga,Antonio Serino,Ernesto Limiti,Luigi Mariucci +12 more
TL;DR: In this article, the authors present the characterization results for several HEMT GaN-based devices developed by SELEX Sistemi Integrati, including pulsed I-V, power sweeps, and load-pull measurements in different bias conditions from class A to class B.