L
L. Morassi
Researcher at University of Modena and Reggio Emilia
Publications - 16
Citations - 223
L. Morassi is an academic researcher from University of Modena and Reggio Emilia. The author has contributed to research in topics: High-κ dielectric & Gate dielectric. The author has an hindex of 8, co-authored 16 publications receiving 207 citations. Previous affiliations of L. Morassi include SEMATECH.
Papers
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Journal ArticleDOI
Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs
Giovanni Verzellesi,L. Morassi,Gaudenzio Meneghesso,Matteo Meneghini,Enrico Zanoni,Gianmauro Pozzovivo,S. Lavanga,Thomas Detzel,Oliver Häberlen,Gilberto Curatola +9 more
TL;DR: In this article, the drain-source capacitance of double-field-plate power AlGaN/GaN HEMTs with C-doped buffers is modeled as a carbon doping mechanism.
Proceedings ArticleDOI
Mechanism of high-k dielectric-induced breakdown of the interfacial SiO 2 layer
Gennadi Bersuker,Dawei Heh,Chadwin D. Young,L. Morassi,Andrea Padovani,Luca Larcher,K. S. Yew,Y. C. Ong,Diing Shenp Ang,Kin Leong Pey,W. Taylor +10 more
TL;DR: In this paper, the breakdown path formation/evolution in the interfacial SiO 2 layer is associated with the growth of an oxygen-deficient filament facilitated by the grain boundaries of the overlaying high-k film.
Journal ArticleDOI
Errors Limiting Split- $CV$ Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs
TL;DR: In this article, the authors analyzed the accuracy of the split-CV mobility extraction method in buried-channel InGaAs MOSFETs with a Al2O3 gate dielectric and an InP barrier, through a simulated experiment procedure using 2D numerical device simulations that are preliminarily calibrated against experimental I-V and CV curves.
Proceedings ArticleDOI
InAs quantum-well MOSFET (L g = 100 nm) with record high g m , f T and f max
Tae-Woo Kim,Hill Richard J,Chadwin D. Young,Dmitry Veksler,L. Morassi,S. Oktybrshky,J. Oh,C. Y. Kang,Dong Ha Kim,J.A. del Alamo,Chris Hobbs,Paul Kirsch,R. Jammy +12 more
TL;DR: InAs quantum-well (QW) MOSFETs with record transconductance and high-frequency performance are reported, showing a possible III-V material pathway from In 1-x Ga x As to InAs with similar processing and generalized characterization.
Journal ArticleDOI
Extraction of interface state density in oxide/III–V gate stacks
Dmitry Veksler,Gennadi Bersuker,H. Madan,L. Morassi,L. Morassi,Giovanni Verzellesi,Giovanni Verzellesi +6 more
TL;DR: In this paper, the authors proposed an extraction approach, which combines the essential features of the high-low method and Terman method, allowing them to self-consistently determine Dit distribution along with values of the critical device parameters, effective oxide thickness (EOT) and substrate doping density (Nd).