Thank you for downloading power electronics converters applications and design. Maybe you have knowledge that, people have look numerous times for their favorite readings like this power electronics converters applications and design, but end up in harmful downloads. Rather than enjoying a good book with a cup of tea in the afternoon, instead they cope with some malicious virus inside their desktop computer.

Power Electronics Converters Applications And Design

: The fabrication of a silicon carbide (SiC) junction field effect transistor (J-FET) was shown practicable. Several amplifier designs were breadboarded with silicon devices to study the required parameters. A simplified building block amplifier was constructed and tested. (Author)

High Temperature Electronics.

The future of power conversion at low-to-medium voltages (around 650 V) poses a very interesting debate. At low voltages (below 100 V), the silicon (Si) MOSFET reigns supreme and at the higher end of the automotive medium-voltage application spectrum (approximately 1 kV and above) the SiC power MOSFET looks set to topple the dominance of the Si insulated-gate bipolar transistor (IGBT). At very high voltages (4.5 kV, 6.5 kV and above) used for grid applications, the press-pack thyristor remains undisputed for current source converters and the press-pack IGBTs for voltage source converters. However, around 650 V, there does not seem to be a clear choice with all the major device manufacturers releasing different technology variants ranging from SiC Trench MOSFETs, SiC Planar MOSFETs, cascode-driven WBG FETs, silicon NPT and Field-stop IGBTs, silicon super-junction MOSFETs, standard silicon MOSFETs, and enhancement mode GaN high electron mobility transistors (HEMTs). Each technology comes with its unique selling point with gallium nitride (GaN) being well known for ultrahigh speed and compact integration, SiC is well known for high temperature, electro-thermal ruggedness, and fast switching while silicon remains clearly dominant in cost and proven reliability. This article comparatively assesses the performance of some of these technologies, investigates their body diodes, discusses device reliability, and avalanche ruggedness.

/pdf/performance-and-reliability-review-of-650-v-and-900-v-441jfn6r0m.pdf

Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs

This letter reports fabrication and testing of integrated circuits (ICs) with two levels of interconnect that consistently achieve greater than 1000 h of stable electrical operation at 500 °C in air ambient. These ICs are based on 4H-SiC junction field-effect transistor technology that integrates hafnium ohmic contacts with TaSi2 interconnects and SiO2 and Si3N4 dielectric layers over $\sim 1$ - $\mu \text{m}$ scale vertical topology. Following initial burn-in, important circuit parameters remain stable within 15% for more than 1000 h of 500 °C operational testing. These results advance the technology foundation for realizing long-term durable 500 °C ICs with increased functional capability for sensing and control combustion engine, planetary, deep-well drilling, and other harsh-environment applications.

Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect

The significant advance of power electronics in today's market is calling for high-performance power conversion systems and MEMS devices that can operate reliably in harsh environments, such as high working temperature. Silicon-carbide (SiC) power electronic devices are featured by the high junction temperature, low power losses, and excellent thermal stability, and thus are attractive to converters and MEMS devices applied in a high-temperature environment. This paper conducts an overview of high-temperature power electronics, with a focus on high-temperature converters and MEMS devices. The critical components, namely SiC power devices and modules, gate drives, and passive components, are introduced and comparatively analyzed regarding composition material, physical structure, and packaging technology. Then, the research and development directions of SiC-based high-temperature converters in the fields of motor drives, rectifier units, DC-DC converters are discussed, as well as MEMS devices. Finally, the existing technical challenges facing high-temperature power electronics are identified, including gate drives, current measurement, parameters matching between each component, and packaging technology.

/pdf/silicon-carbide-converters-and-mems-devices-for-high-ec66fc2sm9.pdf

Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

In this paper, we demonstrate a fully integrated linear voltage regulator in silicon carbide NPN bipolar transistor technology, operational from 25 °C up to 500 °C. For 15-mA load current, this regulator provides a stable output voltage with <2% variation in the temperature range 25 °C–500 °C. For both line and load regulations, degradation of 50% from 25 °C to 300 °C and improvement of 50% from 300 °C to 500 °C are observed. The transient response measurements of the regulator show robust behavior in the temperature range 25 °C–500 °C.

/pdf/500-c-bipolar-sic-linear-voltage-regulator-3l3s0h4qt2.pdf

500 °C Bipolar SiC Linear Voltage Regulator

Wireless power transfer systems and plasma generators are among the increasing number of applications that use high-frequency power converters. Increasing switching frequency can reduce the energy storage requirements of the passive elements that can lead to higher power densities or even the elimination of magnetic cores. However, operating at higher frequencies requires faster switching devices in packages with low parasitics. Wide-bandgap (WBG) power devices, such as gallium nitride (GaN) and silicon carbide (SiC) devices, have high-critical fields and high-thermal conductivity that make them good candidates for efficient high-voltage and high-frequency operations. Commercially available GaN and SiC devices have ratings targeting different applications. Lateral GaN devices dominate in lower voltage ( $C_{\text{oss}},C_{\text{iss}}$ ), which make them easy to drive at high frequencies. On the other hand, vertical SiC devices are often used in high-voltage and low-frequency applications since they have higher blocking voltages and larger gate charge than their GaN counterparts. As a result, SiC devices usually require high power and complicated gate drive circuitry. Recent work shows that in both GaN and SiC devices, losses in device $C_{\text{oss}}$ can exceed the conduction losses at high-switching frequencies and relatively high voltages under zero-voltage-switching conditions. Moreover, the $C_{\text{oss}}$ energy loss ( $E_{\text{oss}}$ ) per switching cycle increases with frequency in GaN devices but remains roughly independent of frequency in SiC devices. This means that at high frequencies, SiC devices can be preferable due to their smaller $C_{\text{oss}}$ energy loss even when taking into consideration the complexity of the gate drive circuit. In this article, we present a WBG high-voltage cascode GaN/SiC power device, combining the advantages of both a GaN and an SiC device—namely, simple gate drive requirements, $E_{\text{oss}}$ loss per cycle roughly independent of frequency, and relatively high-voltage blocking capability. Comparing this cascode GaN/SiC device with an SiC mosfet and a SiC junction gate field-effect transistor of similar voltage ratings and $R_{ds,{\text{ON}}}$ , we find that the inverter using the cascode GaN/SiC device has the highest efficiency and simplest auxiliary gate drive circuitry. Finally, integrating the cascode GaN/SiC device has the potential benefits of achieving lower $C_{\text{oss}}$ losses, higher device ratings, and better heat removal capability.

Cascode GaN/SiC: A Wide-Bandgap Heterogenous Power Device for High-Frequency Applications

Silicon carbide (SiC) integrated circuits have been suggested for extreme environment operation. The challenge of a new technology is to develop process flow, circuit models and circuit designs for ...

https://iopscience.iop.org/article/10.1088/1361-6641/aa59a7/pdf

Bipolar integrated circuits in SiC for extreme environment operation

Silicon Carbide (SiC) is an excellent candidate for high temperature electronics applications, thanks to its wide bandgap. SiC power BJTs are commercially available nowadays, and it is demanding to drive them efficiently. This paper reports on the design, layout specifics, and measurements results of a SiC drive integrated circuit (IC) designed for driving SiC power BJTs. The circuit has been tested in different loading conditions (resistive and capacitive), at switching frequencies up to 500kHz, and together with a commercial power BJT. The SiC drive IC is shown to have a robust operation over the entire temperature range from 25 °C to 500 °C.

A monolithic SiC drive circuit for SiC Power BJTs

The industry standard advanced SPICE model (ASM)-GaN compact model has been enhanced to model the GaN high electron mobility transistors (HEMTs) at extreme temperature conditions. In particular, the temperature dependence of the trapping behavior has been considered and a simplifying approximation in the temperature modeling of the saturation voltage in the ASM-GaN model has been relaxed. The enhanced model has been validated by comparing the simulation results of the model with the dc ${I}$ – ${V}$ measurement results of a GaN HEMT measured with chuck temperatures ranging from 22 °C to 500 °C. A detailed description of the modeling approach is presented. The new formulation of the ASM-GaN compact model can be used to simulate the circuits designed for extreme temperature environments.

/pdf/extreme-temperature-modeling-of-algan-gan-hemts-4biw4jl862.pdf

Saleh Kargarrazi

Papers

500 °C Bipolar SiC Linear Voltage Regulator

Cascode GaN/SiC: A Wide-Bandgap Heterogenous Power Device for High-Frequency Applications

Bipolar integrated circuits in SiC for extreme environment operation

A monolithic SiC drive circuit for SiC Power BJTs

Extreme Temperature Modeling of AlGaN/GaN HEMTs