International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

Based on a physical understanding of phase-noise mechanisms, a passive LC filter is found to lower the phase-noise factor in a differential oscillator to its fundamental minimum. Three fully integrated LC voltage-controlled oscillators (VCOs) serve as a proof of concept. Two 1.1-GHz VCOs achieve -153 dBc/Hz at 3 MHz offset, biased at 3.7 mA from 2.5 V. A 2.1-GHz VCO achieves -148 dBc/Hz at 15 MHz offset, taking 4 mA from a 2.7-V supply. All oscillators use fully integrated resonators, and the first two exceed discrete transistor modules in figure of merit. Practical aspects and repercussions of the technique are discussed.

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A filtering technique to lower LC oscillator phase noise

A simple, physically based analysis illustrate the noise processes in CMOS inverter-based and differential ring oscillators. A time-domain jitter calculation method is used to analyze the effects of white noise, while random VCO modulation most straightforwardly accounts for flicker (1/f) noise. Analysis shows that in differential ring oscillators, white noise in the differential pairs dominates the jitter and phase noise, whereas the phase noise due to flicker noise arises mainly from the tail current control circuit. This is validated by simulation and measurement. Straightforward expressions for period jitter and phase noise enable manual design of a ring oscillator to specifications, and guide the choice between ring and LC oscillator

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Phase Noise and Jitter in CMOS Ring Oscillators

An experimental technique is described for observing the effects of switching transients in digital MOS circuits that perturb analog circuits integrated on the same die by means of coupling through the substrate Various approaches to reducing substrate crosstalk (the use of physical separation of analog and digital circuits, guard rings, and a low-inductance substrate bias) are evaluated experimentally for a CMOS technology with a substrate comprising an epitaxial layer grown on a heavily doped bulk wafer Observations indicate that reducing the inductance in the substrate bias is the most effective Device simulations are used to show how crosstalk propagates via the heavily doped bulk and to predict the nature of substrate crosstalk in CMOS technologies integrated in uniform, lightly doped bulk substrates, showing that in such cases the substrate noise is highly dependent on layout geometry A method of including substrate effects in SPICE simulations for circuits fabricated on epitaxial, heavily doped substrates is developed >

Experimental Results and Modeling Techniques for Substrate Noise in Mixed-Signal Integrated Circuits

There is an unprecedented interest among circuit designers today to obtain insight into the mechanisms of phase noise in LC oscillators. For only with this insight is it possible to optimize oscillator circuits using low-quality integrated resonators to comply with the exacting phase noise specifications of modern wireless systems. In this paper we concentrate on an understanding of the popular differential LC oscillator. We introduce simple models to capture the nonlinear processes that convert voltage or current thermal noise in resistors or transistors into phase noise in the oscillator. The analysis does not require hypothetical elements, such as limiters or amplitude control loops, to fully explain phase noise. A simple expression at the end accurately specifies thermally induced phase noise, and lends substance to Leeson's original hypothesis. Next, the upconversion of flicker noise into phase noise is traced to mechanisms first identified in the 1930's, but apparently since forgotten. Unlike thermally induced phase noise, which appears as phase modulation sidebands, flicker noise is shown to upconvert by bias-dependent frequency modulation. The results are validated against SpectreRF simulations and measurements on two differential CMOS oscillators tuned by resonators with very different Q's.

Physical processes of phase noise in differential LC oscillators

The tuning curve of an LC-tuned voltage-controlled oscillator (VCO) substantially deviates from the ideal curve 1//spl radic/(LC(V)) when a varactor with an abrupt C(V) characteristic is adopted and the full oscillator swing is applied directly across the varactor. The tuning curve becomes strongly dependent on the oscillator bias current. As a result, the practical tuning range is reduced and the upconverted flicker noise of the bias current dominates the 1/f/sup 3/ close-in phase noise, even if the waveform symmetry has been assured. A first-order estimation of the tuning curve for MOS-varactor-tuned VCOs is provided. Based on this result, a simplified phase-noise model for double cross-coupled VCOs is derived. This model can be easily adapted to cover other LC-tuned oscillator topologies. The theoretical analyses are experimentally validated with a 0.25 /spl mu/m CMOS fully integrated VCO for 5 GHz wireless LAN receivers. By eliminating the bias current generator in a second oscillator, the close-in phase noise improves by 10 dB and features -70 dBc/Hz at 10 kHz offset. The 1/f/sup 2/ noise is -132 dBc/Hz at 3 MHz offset. The tuning range spans from 4.6 to 5.7 GHz (21%) and the current consumption is 2.9 mA.

Frequency dependence on bias current in 5 GHz CMOS VCOs: impact on tuning range and flicker noise upconversion

A new concept for quadrature coupling of LC oscillators is introduced and demonstrated on a 5-GHz CMOS voltage-controlled oscillator (VCO). It uses the second harmonic of the outputs to couple the oscillators. The technique provides quadrature over a wide tuning range without introducing any increase in phase noise or power consumption. The VCO is tunable between 4.57 and 5.21 GHz and has a phase noise lower than -124 dBc/Hz at 1-MHz offset over the entire tuning range. The worst-case measured image rejection is 33 dB. The circuit draws 8.75 mA from a 2.5-V supply.

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A low-phase-noise 5-GHz CMOS quadrature VCO using superharmonic coupling

The adoption of dynamic dividers in CMOS phase-locked loops for multigigahertz applications allows to reduce the power consumption substantially without impairing the phase noise and the power supply sensitivity of the phase-locked loop (PLL). A 5-GHz frequency synthesizer integrated in a 0.25-/spl mu/m CMOS technology demonstrates a total power consumption of 13.5 mW. The frequency divider combines the conventional and the extended true-single-phase-clock logics. The oscillator employs a rail-to-rail topology in order to ensure a proper divider function. This PLL intended for wireless LAN applications can synthesize frequencies between 5.14 and 5.70 GHz in steps of 20 MHz. The reference spurs at 10-MHz offset are as low as -70 dBc and the phase noise is lower than -116 dBc/Hz at 1 MHz over the whole tuning range.

A 13.5-mW 5-GHz frequency synthesizer with dynamic-logic frequency divider

This paper introduces a ΔΣ fractional-N digital PLL based on a single-bit TDC. A digital-to-time converter, placed in the feedback path, cancels out the quantization noise introduced by the dithering of the frequency divider modulus and permits to achieve low noise at low power. The PLL is implemented in a standard 65-nm CMOS process. It achieves - 102-dBc/Hz phase noise at 50-kHz offset and a total absolute jitter below 560 fsrms (integrated from 3 kHz to 30 MHz), even in the worst-case of a -42-dBc in-band fractional spur. The synthesizer tuning range spans from 2.92 GHz to 4.05 GHz with 70-Hz resolution. The total power consumption is 4.5 mW, which leads to the best jitter-power trade-off obtained with a fractional-N synthesizer. The synthesizer demonstrates the capability of frequency modulation up to 1.25-Mb/s data rate.

A 2.9–4.0-GHz Fractional-N Digital PLL With Bang-Bang Phase Detector and 560- ${\rm fs}_{\rm rms}$ Integrated Jitter at 4.5-mW Power

This paper presents a physical derivation of phase noise in source-coupled-logic frequency dividers. This analysis takes into account both white and flicker noise sources and is verified on two 32/33 dual-modulus prescalers integrated in a 0.35-/spl mu/m CMOS process. Design techniques for high-speed and low-noise operation are provided. The two integrated prescalers are identical apart from a synchronizing flip-flop at the output of one of them. The measured phase spectra are in good agreement with the estimates and demonstrate that the final synchronization allows a better trade-off between noise and power consumption. The maximum operating frequency is 3 GHz, the power consumption is 27 mW and the phase noise floor is -163 dBc/Hz referred to the 78-MHz output.

Salvatore Levantino

Papers

Frequency dependence on bias current in 5 GHz CMOS VCOs: impact on tuning range and flicker noise upconversion

A low-phase-noise 5-GHz CMOS quadrature VCO using superharmonic coupling

A 13.5-mW 5-GHz frequency synthesizer with dynamic-logic frequency divider

A 2.9–4.0-GHz Fractional-N Digital PLL With Bang-Bang Phase Detector and 560- ${\rm fs}_{\rm rms}$ Integrated Jitter at 4.5-mW Power

Phase noise in digital frequency dividers