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Sanjay K. Banerjee

Researcher at University of Texas at Austin

Publications -  807
Citations -  33572

Sanjay K. Banerjee is an academic researcher from University of Texas at Austin. The author has contributed to research in topics: Silicon & Chemical vapor deposition. The author has an hindex of 62, co-authored 798 publications receiving 30044 citations. Previous affiliations of Sanjay K. Banerjee include Department of Biotechnology & Micron Technology.

Papers
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Characteristics and mechanism study of cerium oxide based random access memories

TL;DR: In this paper, low operating voltage and high resistance ratio of different resistance states of binary transition metal oxide based resistive random access memories (RRAMs) are demonstrated, and very high operation window and low switching voltage of CeOx RRAMs are shown.
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Vertical channel floating gate transistor having silicon germanium channel layer

TL;DR: In this article, a vertical channel flash memory cell with a silicon germanium layer (24) in the channel region provides enhanced secondary electron injection when programming the device, which can have a uniform mole fraction or a graded mole fraction.
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Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide

TL;DR: In this article, the effects of near-interface O vacancies in the oxide slab, and Mo or S vacancies in MoS2 layer on dielectrics were considered. And the effect of vacancies on the electronic structure was investigated.
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Improved hot-carrier and short-channel performance in vertical nMOSFETs with graded channel doping

TL;DR: In this article, a single-step ion implantation was used to form the asymmetric graded doping profile in the channel of vertical sub-100nm nMOSFETs.
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Bilayer Pseudospin Field-Effect Transistor: Applications to Boolean Logic

TL;DR: In this paper, a bilayer pseudospin field effect transistor (BiSFET) is proposed for ultralow power and room-temperature operation, which is based on gated exciton-condensate-enhanced tunneling.