S
Sanjay K. Banerjee
Researcher at University of Texas at Austin
Publications - 807
Citations - 33572
Sanjay K. Banerjee is an academic researcher from University of Texas at Austin. The author has contributed to research in topics: Silicon & Chemical vapor deposition. The author has an hindex of 62, co-authored 798 publications receiving 30044 citations. Previous affiliations of Sanjay K. Banerjee include Department of Biotechnology & Micron Technology.
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Journal ArticleDOI
Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substrates
Jung Hwan Yum,Jung Hwan Yum,T. Akyol,Ming Lei,Domingo Ferrer,Todd W. Hudnall,Michael C. Downer,Christopher W. Bielawski,Gennadi Bersuker,J.C. Lee,Sanjay K. Banerjee +10 more
TL;DR: In this paper, the physical and electrical characteristics of ALD BeO grown on Si and GaAs substrates are further evaluated as a gate dielectric layer in III-V metaloxide-semiconductor devices using transmission electron microscopy, selective area electron diffraction, second harmonic generation, and electrical analysis.
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Characterization of SiGe Quantum Dots on SiO2 and HfO2 Grown by Rapid Thermal Chemical Deposition for Nanoelectronic Devices
TL;DR: In this article, the nucleation and growth of the SiGe dots were quantified by measuring the nuclei density and the concentration of Ge on SiO 2 and HfO 2 using scanning electron microscopy and atomic force microscopy.
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Investigation of atomic layer deposited beryllium oxide material properties for high-k dielectric applications
Donghyi Koh,Jung Hwan Yum,Sanjay K. Banerjee,Todd W. Hudnall,Christopher W. Bielawski,William A. Lanford,Benjamin French,Marc C. French,Patrick Henry,Han Li,Markus Kuhn,Sean W. King +11 more
TL;DR: In this article, the chemical, physical, electrical, and mechanical properties of BeO thin films formed via atomic layer deposition (ALD) were investigated, and it was shown that ALD BeO has a low hydrogen content (<5%) and are nearly stoichiometric (Be/O 1.1 ± 0.05).
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A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current
Qiqing Ouyang,Xiangdong Chen,S.P. Mudanai,Xin Wang,David L. Kencke,A.F. Tasch,L.F. Register,Sanjay K. Banerjee +7 more
TL;DR: In this article, a novel Si/SiGe bandgap engineered pMOSFET structure, called a high mobility heterojunction transistor (HMHJT), is proposed.
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Discontinuity of B‐diffusion profiles at the interface of polycrystalline Si and single crystal Si
Shubneesh Batra,Monte Manning,Chuck Dennison,Akif Sultan,S. Bhattacharya,Kyusung Park,Sanjay K. Banerjee,M. Lobo,G. Lux,C. L. Kirschbaum,J. C. Norberg,T. C. Smith,B. Mulvaney +12 more
TL;DR: In this article, the authors studied the B diffusion in polycrystalline Si and single crystal Si using secondary ion mass spectrometry (SISM) and found that the B in the implant peak region above the B solid solubility limit is immobile due to the formation of electrically inactive B−defect complexes.