S
Sanjay K. Banerjee
Researcher at University of Texas at Austin
Publications - 807
Citations - 33572
Sanjay K. Banerjee is an academic researcher from University of Texas at Austin. The author has contributed to research in topics: Silicon & Chemical vapor deposition. The author has an hindex of 62, co-authored 798 publications receiving 30044 citations. Previous affiliations of Sanjay K. Banerjee include Department of Biotechnology & Micron Technology.
Papers
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Journal ArticleDOI
Electron redistribution and energy transfer in graphene/MoS2 heterostructure
Weiyi Lin,Weiyi Lin,Pingping Zhuang,Pingping Zhuang,Harry Chou,Yuqian Gu,Richard H. Roberts,Wei Li,Sanjay K. Banerjee,Weiwei Cai,Deji Akinwande +10 more
TL;DR: In this paper, van der Waals heterostructures (vdWHs) assembled by molybdenum disulfide (MoS2) and graphene monolayers are used as an experimental prototype to study the interaction between two-dimensional (2D) semiconducting and semimetal materials.
Journal ArticleDOI
Band Structure Engineering of Layered WSe2 via One-Step Chemical Functionalization
Jun Hong Park,Jun Hong Park,Amritesh Rai,Jeongwoon Hwang,Jeongwoon Hwang,Chenxi Zhang,Iljo Kwak,Steven Wolf,Suresh Vishwanath,Xinyu Liu,Malgorzata Dobrowolska,Jacek K. Furdyna,Huili Grace Xing,Kyeongjae Cho,Sanjay K. Banerjee,Andrew C. Kummel +15 more
TL;DR: This (NH4)2S(aq) chemical functionalization technique can serve as a model method to control the electronic band structure and enhance the performance of devices based on 2D layered transition-metal dichalcogenides.
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Monte Carlo study of remote Coulomb and remote surface roughness scattering in nanoscale Ge PMOSFETs with ultrathin high-κ dielectrics
Bahniman Ghosh,Jer Hueih Chen,Jer Hueih Chen,Xiao-Feng Fan,Leonard F. Register,Sanjay K. Banerjee +5 more
TL;DR: In this article, the authors performed full-band Monte Carlo simulations of nanoscale Ge bulk PMOSFETs with ultrathin dielectrics and investigated the importance of remote Coulomb and remote surface roughness scattering in these devices.
Proceedings ArticleDOI
Ge-Si x Ge 1-x core-shell nanowire tunneling field-effect transistors
TL;DR: In this paper, the fabrication and experimental investigation of Ge-Si x Ge 1-x core-shell nanowire (NW) tunneling field effect transistors (TFETs) was reported.
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Short-Term Relaxation in HfO x /CeO x Resistive Random Access Memory With Selector
Cheng-Chih Hsieh,Yao-Feng Chang,Yoocharn Jeon,Anupam Roy,Davood Shahrjerdi,Sanjay K. Banerjee +5 more
TL;DR: In this paper, short-term relaxation in a CeOx-based resistive random access memory (RRAM) device was investigated and it was shown that the noise of the serial selector device can impact the shortterm relaxation, reduce the operating window of the RRAM, and increase the read error.