Sean P. E. Smith

TL;DR: In this paper, a structure incorporating very low dielectric constant (k) insulators with copper wiring to achieve high performance interconnects is proposed, which combines a durable layer for strength with a very low k dielectrics for interconnect electrical performance.

TL;DR: In this paper, an integrated circuit structure is described that has a layer of logical and functional devices and an interconnection layer above the layer of logic and functional device, with a substrate, conductive features within the substrate and caps positioned only above the conductive feature.

TL;DR: In this paper, a CoWP or Ta/TaN cap on top of the Cu line surface significantly reduced interface diffusion and improved the electromigration lifetime when compared with lines capped with SiN/sub x/ or SiC/sub y/H/sub z/, respectively.

TL;DR: In this article, the authors investigated the solubility and diffusivity of Co in Damascene bamboo-like grain structure lines capped with CoWP for sample temperatures between 350 and 425°C.

TL;DR: In this article, a thin electroless CoWP, physical vapor deposition (PVD) Ta, PVD Pd or PVD Ta/TaN cap on top of the Cu line significantly reduced the interface diffusivity and remarkably improved the electromigration lifetime when compared with lines capped with SiN x or SiC x N y H z.