Seung Chul Chae

TL;DR: Noh et al. as discussed by the authors proposed a percolation model based on a network of circuit breakers with two switchable metastable states to explain the reversible resistance switching behavior in polycrystalline TiO2 thin capacitors.

TL;DR: It is determined that flat bands exist and induce robust yet independently switchable dipoles that exhibit a distinct ferroelectricity in hafnium dioxide (HfO2), and offers unexpected opportunities for ultimately dense unit cell–by–unit cell ferro electric switching devices that are directly integrable into silicon technology.

TL;DR: Flexoelectricity can play an important role in the reversal of the self-polarization direction in epitaxial BiFeO3 thin films.

TL;DR: In this paper, the authors discovered stripe patterns of trimerization-ferroelectric domains in hexagonal REMnO(3) (RE=Ho,···,Lu) crystals (grown below ferroelectric transition temperatures (T(c)), reaching up to 1435 °C), in contrast with the vortex patterns in YMnO (3).

TL;DR: This paper presents a probabilistic analysis of the response of gallium arsenide to electricity and its applications in semiconductor devices and shows clear trends in high-performance materials and high-efficiency electronics.