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Spyridon Pavlidis

Researcher at North Carolina State University

Publications -  46
Citations -  471

Spyridon Pavlidis is an academic researcher from North Carolina State University. The author has contributed to research in topics: Gallium nitride & Amplifier. The author has an hindex of 8, co-authored 34 publications receiving 323 citations. Previous affiliations of Spyridon Pavlidis include Georgia Institute of Technology.

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Journal ArticleDOI

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

TL;DR: In this article, Si-implanted AlN with high conductivity (>1 Ω−1 cm−1) and high carrier concentration (5'×'1018 cm−3) was demonstrated.
Proceedings ArticleDOI

Investigation of surface roughness effects for D-band SIW transmission lines on LCP substrate

TL;DR: This is the first paper that demonstrates the loss of SIW to be comparable to that of microstrip in the D-Band, and both fabrication and modeling solutions are provided to facilitate future high-frequency designs ofSIW-based devices.
Journal ArticleDOI

Direct correlation between potentiometric and impedance biosensing of antibody-antigen interactions using an integrated system

TL;DR: A fully integrated system that combines extended gate field-effect transistor (EGFET)-based potentiometric biosensor and electrochemical impedance spectroscopy (EIS)-based biosensors has been demonstrated, enabling the sequential measurement of the same immunological binding event on the same sensing surface.
Proceedings ArticleDOI

Integrated microfluidic cooling for GaN devices on multilayer organic LCP substrate

TL;DR: In this article, an integrated microfluidic cooling scheme on multilayer organic liquid crystal polymer (LCP) substrate for high power X-band gallium nitride (GaN) devices and amplifiers is presented.
Proceedings ArticleDOI

An X-band GaN HEMT hybrid power amplifier with low-loss Wilkinson division on AlN substrate

TL;DR: In this article, the high power operation of a modular and compact power amplifier (PA) is demonstrated using gallium nitride transistors and power-combining networks implemented on an aluminum nitride (AlN) substrate.