Stefaan Van Huylenbroeck

TL;DR: In this article, a low thermal budget, 10im pitch and aspect ratio 10 (5im diameter, 50im depth) via-last TSV module is presented, with 50im thinned device wafers temporary bonded to a Si carrier using Brewer Science Zonebond® material.

TL;DR: In this article, an advanced Via-Middle TSV metallization scheme is presented, featuring a high conformal ALD oxide liner, a thermal ALD WN barrier, an electroless NiB platable seed and a high throughput copper ECD filling process.

TL;DR: In this article, the authors compared a lognormal distribution and a distribution of the maximum of two normal variables to fit experimental data and showed that the maximum-of-two normal distribution provides a better fit, in particular at the right tail, which is more significant for the potential reliability impact of Cu pumping, and also showed how Cu pumping is determined by the network of random high angle grain boundaries in the Cu region near the TSV top.

TL;DR: In this article, the TSV diameter is reduced to 0.7µm by using an APF strippable amorphous carbon film and the bottom dielectric tri-layer, consisting of an STI oxide, a thin SiN and a PMD oxide layer, is etched using a dedicated three-step selective etch recipe.