scispace - formally typeset
S

Stephan Buecheler

Researcher at Swiss Federal Laboratories for Materials Science and Technology

Publications -  138
Citations -  8802

Stephan Buecheler is an academic researcher from Swiss Federal Laboratories for Materials Science and Technology. The author has contributed to research in topics: Copper indium gallium selenide solar cells & Thin film. The author has an hindex of 37, co-authored 138 publications receiving 6994 citations. Previous affiliations of Stephan Buecheler include École Polytechnique Fédérale de Lausanne.

Papers
More filters
Journal ArticleDOI

Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells

TL;DR: A new sequential post-deposition treatment of the CIGS layer with sodium and potassium fluoride is presented that enables fabrication of flexible photovoltaic devices with a remarkable conversion efficiency due to modified interface properties and mitigation of optical losses in the CdS buffer layer.
Journal ArticleDOI

Highly efficient Cu(In,Ga)Se2 solar cells grown on flexible polymer films

TL;DR: A strong composition gradient in the absorber layer is identified as the main reason for inferior performance and it is shown that, by adjusting it appropriately, very high efficiencies can be obtained.
Journal ArticleDOI

Low-temperature-processed efficient semi-transparent planar perovskite solar cells for bifacial and tandem applications

TL;DR: A low-temperature process for efficient semi-transparent planar perovskite solar cells and a hybrid thermal evaporation–spin coating technique is developed to allow the introduction of PCBM in regular device configuration, which facilitates the growth of high-quality absorber, resulting in hysteresis-free devices.
Journal ArticleDOI

Unveiling the effects of post-deposition treatment with different alkaline elements on the electronic properties of CIGS thin film solar cells.

TL;DR: It is concluded that a model based on a secondary diode at the CIGS/Mo interface can best explain these features such as the position of the N1 signal in admittance spectroscopy and the roll-over of the J-V curve at low temperature.