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Tae Won Noh

Researcher at Seoul National University

Publications -  295
Citations -  12804

Tae Won Noh is an academic researcher from Seoul National University. The author has contributed to research in topics: Thin film & Ferroelectricity. The author has an hindex of 49, co-authored 268 publications receiving 11057 citations. Previous affiliations of Tae Won Noh include Cornell University & Ohio State University.

Papers
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Rotation of reflectivity anisotropy due to uniaxial strain along [ 110 ] tetr in the electron-doped Fe-based superconductor Ba ( Fe 0.955 Co 0.045 ) 2 As 2

TL;DR: In this paper, a strain-dependent time-resolved reflectometry experiment was conducted on the nematic domain of the electron-doped iron pnictide and it was shown that the symmetry-breaking orientation of the symmetry domain can be rotated by a factor of 20 by applying uniaxial external pressure.
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Strong resistance nonlinearity and third harmonic generation in the unipolar resistance switching of NiO thin films

TL;DR: In this article, the authors investigated the third harmonic generation in NiO thin films, which exhibit unipolar resistance switching behavior, and found that the low resistance states of the films were strongly nonlinear, with variations in the resistance R as large as 60%.
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Growth and atomically resolved polarization mapping of ferroelectric $Bi_2WO_6$ thin film

TL;DR: In this paper, the authors reported pulsed laser deposition (PLD) of Auroraivillius ferroelectric (Bi_2WO_6$) thin films on (001) $SrTiO_3$ substrates and characterization of ferro-electricity using the scanning transmission electron microscopy (STEM) and piezoresponse force microscopy techniques.
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√{2 }×√{2 }R 45° surface reconstruction and electronic structure of BaSnO 3 film

TL;DR: In this paper, the surface and electronic structures of barium stannate (BaSnO) thin films were studied by low-energy electron diffraction (LEED) and angle-resolved photoemission spectroscopy (ARPES) techniques.
Patent

Ferroelectric memory device and method for manufacturing same

TL;DR: In this article, a multilevel polarization (MLP) state was generated due to the adjustment of a displacement current, and a method for manufacturing the MLP memory device was proposed.