T
Tae Won Noh
Researcher at Seoul National University
Publications - 295
Citations - 12804
Tae Won Noh is an academic researcher from Seoul National University. The author has contributed to research in topics: Thin film & Ferroelectricity. The author has an hindex of 49, co-authored 268 publications receiving 11057 citations. Previous affiliations of Tae Won Noh include Cornell University & Ohio State University.
Papers
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Journal ArticleDOI
Scaling theory for unipolar resistance switching.
Jae Sung Lee,Shinbuhm Lee,Seo Hyoung Chang,Ligang Gao,Bo Soo Kang,Myoung-Jae Lee,C. J. Kim,Tae Won Noh,Byungnam Kahng,Byungnam Kahng +9 more
TL;DR: A scaling theory is developed that can explain the transport properties of these conducting paths, based on the fractal geometry of a percolating cluster, that predicts that two scaling behaviors emerge, depending on the topologies of the conducting paths.
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Overcoming the Fundamental Barrier Thickness Limits of Ferroelectric Tunnel Junctions through BaTiO3/SrTiO3 Composite Barriers.
Lingfei Wang,Myung Rae Cho,Yeong Jae Shin,Jeong Rae Kim,Saikat Das,Jong-Gul Yoon,Jin-Seok Chung,Tae Won Noh +7 more
TL;DR: The results reveal a new paradigm to manipulate the FTJs through designing multilayer tunneling barriers with hybrid functionalities and high tunability can be utilized to overcome the barrier thickness limits and enhance the overall CB-FTJ performances beyond those of SB- FTJ.
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Active Control of Ferroelectric Switching Using Defect-Dipole Engineering
Daesu Lee,Byung-Chul Jeon,Seung Hyub Baek,Sang Mo Yang,Yeong Jae Shin,Tae Heon Kim,Yong Su Kim,Jong-Gul Yoon,Chang-Beom Eom,Tae Won Noh +9 more
TL;DR: The unique functionality of the defect dipole to control ferroelectric switching is visualized and can provide a foundation for novel ferro electric applications, such as high-density multilevel data storage.
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Controllable Thickness Inhomogeneity and Berry Curvature Engineering of Anomalous Hall Effect in SrRuO3 Ultrathin Films.
TL;DR: In this paper, the evolution of AHE with controllable inhomogeneities in SrRuO3 film thickness (tSRO) was investigated, and microscopically ordered stripe pattern with one-unit-cell differences in tSRO was induced.
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Nanoscale studies of defect-mediated polarization switching dynamics in ferroelectric thin film capacitors
TL;DR: In this article, a review of recent nanoscale PFM studies of domain switching dynamics in ferroelectric (FE) thin films is presented, including defect-mediated inhomogeneous nucleation, pinning-dominated nonlinear dynamics of domain walls and many other intriguing phenomena.