T
Thaddeus J. Asel
Researcher at Ohio State University
Publications - 22
Citations - 547
Thaddeus J. Asel is an academic researcher from Ohio State University. The author has contributed to research in topics: Molecular beam epitaxy & Doping. The author has an hindex of 7, co-authored 18 publications receiving 331 citations. Previous affiliations of Thaddeus J. Asel include Air Force Research Laboratory & University of Dayton.
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Journal ArticleDOI
Direct observation of a two-dimensional hole gas at oxide interfaces.
Hyungwoo Lee,Neil Campbell,Ja Kyung Lee,Thaddeus J. Asel,Tula R. Paudel,H. Zhou,Jung-Woo Lee,Brenton A. Noesges,Jung Woo T. Seo,Bumsu Park,Bumsu Park,Leonard J. Brillson,Sang Ho Oh,Evgeny Y. Tsymbal,Mark Rzchowski,Chang-Beom Eom +15 more
TL;DR: First-principles calculations, coherent Bragg rod analysis and depth-resolved cathodoluminescence spectroscopy consistently support the finding that to eliminate ionic point defects is key to realizing a 2DHG.
Journal ArticleDOI
Optical signatures of deep level defects in Ga2O3
Hantian Gao,Shreyas Muralidharan,Nicholas Pronin,Rezaul Karim,Susan M. White,Thaddeus J. Asel,G. M. Foster,Sriram Krishnamoorthy,Siddharth Rajan,Lei Cao,Masataka Higashiwaki,Holger von Wenckstern,Marius Grundmann,Hongping Zhao,David C. Look,Leonard J. Brillson +15 more
TL;DR: In this article, the authors used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectrography to measure the effects of near-surface plasma processing and neutron irradiation on native point defects in β-Ga2O3.
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Lateral β-Ga2O3 field effect transistors
Kelson D. Chabak,Kevin D. Leedy,Andrew J. Green,Shin Mou,Adam T. Neal,Thaddeus J. Asel,Eric R. Heller,Nolan S. Hendricks,Kyle J. Liddy,Antonio Crespo,Nicholas C. Miller,Miles Lindquist,Neil Moser,Robert C. Fitch,Dennis E. Walker,Donald L. Dorsey,Gregg H. Jessen +16 more
TL;DR: In this article, a review of BGO epitaxial materials and lateral field effect transistors developments, highlight early achievements and discuss engineering solutions with power switching and radio frequency applications in mind.
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Tailoring the Electronic Structure of Covalently Functionalized Germanane via the Interplay of Ligand Strain and Electronegativity
Shishi Jiang,Kevin Krymowski,Thaddeus J. Asel,Maxx Q. Arguilla,Nicholas D. Cultrara,Eric Yanchenko,Xiao Yang,Leonard J. Brillson,Wolfgang Windl,Joshua E. Goldberger +9 more
TL;DR: In this paper, the role of ligand size and electronegativity on functionalization density, framework structure, and electronic structure was established through the synthesis of numerous ligand-functionalized germanane crystals.
Journal ArticleDOI
Native point defect formation in flash sintered ZnO studied by depth-resolved cathodoluminescence spectroscopy
TL;DR: In this article, depth-resolved cathodoluminescence spectroscopy studies of flash sintered ZnO reveal that thermal runaway induces the formation of native point defects inside individual grains.