T
Thao N. Nguyen
Researcher at IBM
Publications - 52
Citations - 1956
Thao N. Nguyen is an academic researcher from IBM. The author has contributed to research in topics: Electronic document & Contract management. The author has an hindex of 21, co-authored 52 publications receiving 1939 citations.
Papers
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Journal ArticleDOI
Oxidation studies of SiGe
TL;DR: In this paper, the authors studied the kinetics and mechanism of oxidation of SiGe alloys deposited epitaxially onto Si substrates by low-temperature chemical vapor deposition and demonstrated that Ge plays a purely catalytic role, i.e., it enhances the reaction rate while remaining unchanged itself.
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High-field-induced degradation in ultra-thin SiO/sub 2/ films
TL;DR: In this article, the authors proposed that the oxide leakage originates from localized defect-related weak spots where the insulator has experienced significant deterioration from electrical stress, and the leakage conduction mechanism appears to be thermally assisted tunneling through the locally reduced injection barrier.
Journal ArticleDOI
Nonequilibrium boron doping effects in low‐temperature epitaxial silicon films
TL;DR: In this paper, the first preparation of in situ boron-doped epilayers by a low-temperature chemical vapor deposition process (T=550 °C) was reported.
Proceedings ArticleDOI
A Software as a Service with Multi-tenancy Support for an Electronic Contract Management Application
TL;DR: This first of a kind multi-tenancy SaaS electronic contract management application can reduce the application hosting cost and make the application more affordable to the tenants because of its capabilities in customization and scalability while continuing to support an increasing number of tenants.
Journal ArticleDOI
A gate-quality dielectric system for SiGe metal-oxide-semiconductor devices
Subramanian S. Iyer,Paul M. Solomon,V. P. Kesan,A.A. Bright,J. L. Freeouf,Thao N. Nguyen,A. C. Warren +6 more
TL;DR: In this paper, a high-quality dielectric system for use with Si/sub 1-x/Ge/sub x/ alloys was presented, where the buffer layer and the deposited oxide prevent the accumulation of Ge at the oxide-semiconductor interface and thus keep the interface state density within acceptable limits.