Journal ArticleDOI
Oxidation studies of SiGe
TLDR
In this paper, the authors studied the kinetics and mechanism of oxidation of SiGe alloys deposited epitaxially onto Si substrates by low-temperature chemical vapor deposition and demonstrated that Ge plays a purely catalytic role, i.e., it enhances the reaction rate while remaining unchanged itself.Abstract:
We have studied the kinetics and mechanism of oxidation of SiGe alloys deposited epitaxially onto Si substrates by low‐temperature chemical vapor deposition. Ge is shown to enhance oxidation rates by a factor of about 3 in the linear regime, and to be completely rejected from the oxide so that it piles up at the SiO2/SiGe interface. We demonstrate that Ge plays a purely catalytic role, i.e., it enhances the reaction rate while remaining unchanged itself. Electrical properties of the oxides formed under these conditions are presented, as well as microstructures of the oxide/substrate, Ge‐enriched/SiGe substrate, and SiGe/Si substrate interfaces, and x‐ray photoemission studies of the early stages of oxidation. Possible mechanisms are discussed and compared with oxidation of pure silicon.read more
Citations
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Journal ArticleDOI
High-k/Ge MOSFETs for future nanoelectronics
TL;DR: In this article, the opportunities and challenges of high-k/Ge MOSFETs are discussed on the basis of the material properties of Ge oxide to provide insights for future progress.
Journal ArticleDOI
Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction
TL;DR: In this article, a promising fabrication method for a Si1−xGex-on-insulator (SGOI) virtual substrate and evaluation of strain in the Si layer on this SGOI substrate are presented.
Journal ArticleDOI
Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates
Minjoo L. Lee,Christopher W. Leitz,Z. Y. Cheng,Arthur J. Pitera,Thomas A. Langdo,Matthew T. Currie,Gianni Taraschi,Eugene A. Fitzgerald,Dimitri A. Antoniadis +8 more
TL;DR: In this article, a strained Ge channel p-type metal-oxide-semiconductor field effect transistors (p-MOSFETs) were fabricated on Si0.3Ge0.7 virtual substrates.
Journal ArticleDOI
Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS
TL;DR: In this paper, the feasibility of a p-channel quantum-well MOSFET on a Ge/sub x/Si/sub 1-x/Si heterostructure was demonstrated.
Journal ArticleDOI
Growth of Ge, Si, and SiGe nanocrystals in SiO2 matrices
TL;DR: In this paper, the microstructure of group-IV semiconductor materials (Si, Ge, and SiGe) has been studied by transmission electron microscopy and critical influences of the annealing temperatures and implantation doses on the nanocrystal size distributions are demonstrated with the Ge-implanted systems.
References
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Journal ArticleDOI
Probing the transition layer at the SiO2‐Si interface using core level photoemission
G. Hollinger,F. J. Himpsel +1 more
TL;DR: In this article, high resolution Si 2p photoelectron spectra obtained with synchrotron radiation were used to determine the distribution of oxidation states in the intermediary layer at the SiO2Si interface.
Journal ArticleDOI
Surface oxidation states of germanium
TL;DR: In this article, high resolution Ge 3D photoelectron spectra obtained with synchrotron radiation are used to determine the surface oxidation states of Ge(100) and Ge(111) surfaces.
Journal ArticleDOI
Silicon Oxidation in an Oxygen Plasma Excited by Microwaves
TL;DR: In this paper, a preliminary study of the oxidation of silicon by a moderate density oxygen gas plasma has provided two methods for oxidizing silicon rapidly at low temperatures, which allow for masking against the growth of the film.
Journal ArticleDOI
Formation of epitaxial layers of Ge on Si substrates by Ge implantation and oxidation
TL;DR: In this paper, the authors characterized the thickness of the Ge layer and its two bounding interfaces with the oxide and Si as a function of the implantation dose and energy, using Rutherford backscattering and high-resolution transmission electron microscopy.
Book
Instabilities in silicon devices : silicon passivation and related instabilities
Gérard Barbottin,André Vapaille +1 more
TL;DR: In this paper, a review of passivation-related instability in modern silicon devices is presented, and the effects of Radiations on the Si-SiO2 interface are discussed.