T
Theodore I. Kamins
Researcher at Stanford University
Publications - 476
Citations - 20099
Theodore I. Kamins is an academic researcher from Stanford University. The author has contributed to research in topics: Silicon & Nanowire. The author has an hindex of 67, co-authored 474 publications receiving 19482 citations. Previous affiliations of Theodore I. Kamins include University of California, Los Angeles & National Institute for Nanotechnology.
Papers
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Proceedings ArticleDOI
Ge quantum well resonator modulators
Elizabeth H. Edwards,Ross M. Audet,Edward T. Fei,Gary Shambat,Rebecca K. Schaevitz,Yiwen Rong,Stephanie A. Claussen,Theodore I. Kamins,Jelena Vuckovic,James S. Harris,David A. B. Miller +10 more
TL;DR: In this article, surface-normal asymmetric Fabry-Perot and microdisk resonator modulators employing Ge quantum wells grown on silicon were demonstrated and compared with conventional optical modulators.
Patent
Method for forming one or a plurality of nano pores for aligning molecules for molecular electronics
TL;DR: In this article, the problem of forming nano-pores useful for aligning molecules is addressed, where the array of molecules is formed by an array of small aligned nanopores (nanopores) in the substrate or by distributing the molecules in the die.
Journal ArticleDOI
Field-electron emission at 300K in self-assembled arrays of silicon nanowires
Alla I. Klimovskaya,Yurii M. Litvin,Yuliya Yu. Moklyak,Alex A. Dadykin,Theodore I. Kamins,Shashank Sharma +5 more
TL;DR: In this paper, the field emission of silicon nanowires was studied at room temperature in ultrahigh vacuum using a parallel-plate diode cell, and the currentvoltage characteristics deviated from the Fowler-Nordheim law and exhibited a stepwise increase of the current with increasing voltage at 300K.
Journal ArticleDOI
Effect of phosphorus on island formation
TL;DR: In this article, a phosphorus-containing species during chemical vapor deposition of Ge islands on Si (0 0 1) was used to modify the island sizes and shapes, primarily by changing the surface energies and the relative surface energies of different surface facets.
Proceedings ArticleDOI
Self-assembled silicon nano-bridges as an enabler for nano-sensors
TL;DR: In this paper, metal-catalyzed silicon nanowires bridging between vertical Si planes formed by anisotropic etching a [110]-oriented silicon wafer were used to construct a large array of nano-scale sensors.