T
Theodore I. Kamins
Researcher at Stanford University
Publications - 476
Citations - 20099
Theodore I. Kamins is an academic researcher from Stanford University. The author has contributed to research in topics: Silicon & Nanowire. The author has an hindex of 67, co-authored 474 publications receiving 19482 citations. Previous affiliations of Theodore I. Kamins include University of California, Los Angeles & National Institute for Nanotechnology.
Papers
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Field-effects in polycrystalline-silicon films
TL;DR: In this article, the effect of a normal electric field applied near the surface of a chemically deposited polycrystalline-silicon film has been studied, and it was shown that deep donors increase the magnitude of the threshold voltage of a p-channel MOS transistor constructed with the conducting channel in the polycrystaline-silicon film, while deep acceptors have the opposite effect.
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Comparison of boron diffusion in Si and strained Si1-xGex epitaxial layers
TL;DR: In this paper, boron diffusion in Si and strained Si1−xGex, in situ doped, epitaxial layers was investigated and it was found that the effective diffusivity Deff in Si0.83Ge0.17 is approximately an order of magnitude lower than that in Si.
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Ge/SiGe Quantum Well Waveguide Modulator Monolithically Integrated With SOI Waveguides
Shen Ren,Yiwen Rong,Stephanie A. Claussen,Rebecca K. Schaevitz,Theodore I. Kamins,James S. Harris,David A. B. Miller +6 more
TL;DR: In this paper, a Ge/SiGe quantum well waveguide electroabsorption modulator that is monolithically integrated with silicon-on-insulator waveguides is reported.
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Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing
Robert Chen,Yi-Chiau Huang,Suyog Gupta,A. C. Lin,Errol Antonio C. Sanchez,Yihwan Kim,Krishna C. Saraswat,Theodore I. Kamins,James S. Harris +8 more
TL;DR: In this article, the authors report on the characterization of high Sn-content (∼10% Sn) GeSn films grown on (001) Ge/Si substrates using reduced-pressure chemical vapor deposition.
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Synthesis of thin silicon nanowires using gold-catalyzed chemical vapor deposition
TL;DR: In this paper, the dependence of the Au-Si alloy droplet size and size distribution on the starting gold film thickness and the annealing conditions was studied and a modified heating sequence was used to demonstrate the growth of bridging silicon nanowires with diameters less than 20 nm, which is a significant step in producing electronic devices.