T
Theodore I. Kamins
Researcher at Stanford University
Publications - 476
Citations - 20099
Theodore I. Kamins is an academic researcher from Stanford University. The author has contributed to research in topics: Silicon & Nanowire. The author has an hindex of 67, co-authored 474 publications receiving 19482 citations. Previous affiliations of Theodore I. Kamins include University of California, Los Angeles & National Institute for Nanotechnology.
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Journal ArticleDOI
Direct measurement of strain in a Ge island on Si(001)
Peter D. Miller,Chuan-Pu Liu,William L. Henstrom,J. Murray Gibson,Yonggang Huang,P. Zhang,Theodore I. Kamins,D. P. Basile,R. Stanley Williams +8 more
TL;DR: In this article, the authors report on a direct measurement of the strain in a single Ge "quantum dot" island grown on Si by chemical vapor deposition, which they use to measure the maximum in-plane displacement, and good agreement is found between the experimental value of 0.86±0.17% average strain and finite element simulations assuming pure Ge.
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Equilibrium Shape Diagram for Strained Ge Nanocrystals on Si(001)
TL;DR: In this paper, a chemical-thermodynamic model was introduced to explain the formation and annealing behavior of Ge nanocrystalline islands grown on Si(001) in a geodesic environment.
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Thermal stability of Ti-catalyzed Si nanowires
TL;DR: The stability of long, narrow Si nanowires grown by catalytic decomposition of a Si-containing gas during annealing was investigated in this paper, and it was shown that surface diffusion appears to be sufficient to allow constant-diameter nanowire regions to form.
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Simple Electroabsorption Calculator for Designing 1310 nm and 1550 nm Modulators Using Germanium Quantum Wells
Rebecca K. Schaevitz,Elizabeth H. Edwards,Jonathan E. Roth,Edward T. Fei,Yiwen Rong,Pierre Wahl,Theodore I. Kamins,James S. Harris,David A. B. Miller +8 more
TL;DR: In this article, a simple quantum well electroabsorption calculator (SQWEAC) uses the tunneling resonance method, 2-D Sommerfeld enhancement, the variational method and an indirect absorption model.
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Dome-to-pyramid shape transition in Ge/Si islands due to strain relaxation by interdiffusion
TL;DR: In this article, the authors used a transmission electron microscopy (TEM) to measure the strain versus aspect ratio for the various annealing times of the Si(001) epilayer.