Thomas Fromherz

TL;DR: In this article, a one-dimensional diffusion model is established which allows a quantitative determination of the Ge surface diffusion constant and the rates at which Ge atoms are incorporated into the growing islands.

TL;DR: In this article, the optical transitions in tensily strained PbSe∕PbEuSeTe multiquantum wells were investigated by differential transmission spectroscopy, and the deformation potentials of PbSE were obtained from the measured shifts of optical transitions.

TL;DR: In this article, an analytical model for the calculation of strain fields of buried self-assembled SiGe wires in a SiGe/Si multilayer was developed for a simulation of the diffraction pattern from buried wires, which were investigated by grazing-incidence x-ray diffraction.

TL;DR: In this paper, the authors studied the pumping intensity dependence of the photoluminescence (PL) spectra of SiGe quantum dots on Si(001) substrates and revealed several distinct bands, attributed to phonon-assisted recombination and no-phonon recombination of the excitonic ground state and of the excited excITonic states.

TL;DR: In this article, the authors performed wavelength and temperature-dependent lateral photocurrent measurements on self-assembled PbSe∕PbEuTe quantum-dot superlattices.