Thomas Fromherz

TL;DR: In this paper, the authors reported the quantitative and direct determination of hole intersubband relaxation times in a voltage biased SiGe heterostructure using density matrix calculations applied to a four-level system in order to interpret photocurrent (PC) pump-pump experiments.

TL;DR: In this article, a set of structural parameters, determined with high accuracy in combination with polarization resolved intersubband absorption and photoluminescence spectra deduced from the same set of samples, were compared with k.p calculations.

TL;DR: An approach that uses existing nanoimprint molds and reduces the size of the resulting features significantly via a remastering process utilizing the anisotropic etchant tetramethylammonium hydroxide and a mold casting step is presented.

TL;DR: In this article, the growth of SiGe quantum dot crystals is described, which are realized by depositing Ge on a two-dimensional, pit-patterned Si substrate and subsequent growth of the Si spacer and Ge island layers.

TL;DR: In this paper, the Si-based quantum cascade laser is implemented and the primary challenges in implementing a Si based quantum cascade was discussed, with an interface roughness of < 0.4 nm and the upper state lifetime τnr was ~ 100 fs.