The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a high-fidelity spin-photon interface, which is a crucial prerequisite for such technologies, has not yet been demonstrated. Here, we demonstrate that such an interface exists in isolated divacancies in epitaxial films of 3C-SiC and 4H-SiC. Our data show that divacancies in 4H-SiC have minimal undesirable spin mixing, and that the optical linewidths in our current sample are already similar to those of recent remote entanglement demonstrations in other systems. Moreover, we find that 3C-SiC divacancies have a millisecond Hahn-echo spin coherence time, which is among the longest measured in a naturally isotopic solid. The presence of defects with these properties in a commercial semiconductor that can be heteroepitaxially grown as a thin film on Si shows promise for future quantum networks based on SiC defects. DOI:https://doi.org/10.1103/PhysRevX.7.021046 Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI. Published by the American Physical Society

https://link.aps.org/pdf/10.1103/PhysRevX.7.021046

Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface

Methods for manufacturing silicon carbide wafers having superior specifications for bow, warp, total thickness variation (TTV), local thickness variation (LTV), and site front side least squares focal plane range (SFQR). The resulting SiC wafer has a mirror-like surface that is fit for epitaxial deposition of SiC. The specifications for bow, warp, total thickness variation (TTV), local thickness variation (LTV), and site front side least squares focal plane range (SFQR) of the wafer are preserved following the addition of the epitaxy layer.

Flat sic semiconductor substrate

https://iopscience.iop.org/article/10.1088/1361-6641/aad831/pdf

Review of SiC crystal growth technology

Recent advances in 4H-SiC epitaxy for high-voltage power devices

The present invention provides single-crystal silicon carbide and a single-crystal silicon carbide wafer of good-quality that are low in dislocations, micropipes and other crystal defects and enable high yield and high performance when applied to a device, wherein the ratio of doping element concentrations on opposite sides in the direction of crystal growth of the interface between the seed crystal and the grown crystal is 5 or less and the doping element concentration of the grown crystal in the vicinity of the seed crystal is 2 x 1019 cm-3 to 6 x 1020 cm-3.

Silicon carbide single crystal and silicon carbide single crystal wafer

The growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined. Methods to increase the crystal diameters, and to turn these large diameter crystals into substrates that are ready for the epitaxial growth of SiC or other non homogeneous epitaxial layers are discussed. We review the present status of 150 mm and 200 mm substrate quality at Cree, Inc. in terms of crystallinity, dislocation density as well as the final substrate surface quality.

Bulk Growth of Large Area SiC Crystals

The invention is an improvement in the method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system. In a first embodiment, the improvement comprises reducing the number of macrosteps in a growing crystal by incorporating a high concentration of nitrogen atoms in the initial one (1) millimeter of crystal growth.

Process for producing high quality large size silicon carbide crystals

Definitive correlations are presented between specific types of dislocations identified via Synchrotron White Beam X-Ray Topography (SWBXRT) and identified via selective etching of 4H-SiC substrates. A variety of etch conditions and the results on different faces of SiC substrates and epiwafers are examined. Hillocks formed on the carbon face of the substrate after KOH etching correlate very well to TSDs identified via SWBXRT. Topography of substrates and of vertical crystal slices reveals a large proportion of Threading Mixed character Dislocations (TMDs) in the population of Threading Screw Dislocations.

Valeri F Tsevtkov

Papers

Bulk Growth of Large Area SiC Crystals

Process for producing high quality large size silicon carbide crystals

Dislocation Characterization in 4H-SiC Crystals