M. O’Loughlin

TL;DR: In this article, the growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined, and methods to increase the crystal diameters, and to turn these large diameter crystals into substrates that are ready for the epitaxial growth of SiC or other non homogeneous epitaxially layers are discussed.

TL;DR: In this paper, a method for locally controlling the stoichiometry of an epitaxially deposited layer on a semiconductor substrate is provided, which includes directing a first reactant gas and a doping gas across a top surface of a substrate and directing a drive and a second reactionant gas against the substrate separately from the first reactive gas.

TL;DR: In this article, a planar MOSFET with voltage ratings from 900 V to 15 kV is presented, where the specific on-resistance of the MOS-FETs is approaching the theoretical limit.

TL;DR: In this paper, the impact of the lifetime enhancement process using high temperature thermal oxidation method on 4H-SiC P-GTOs was investigated, and it was observed that the effectiveness of the LEO process was very sensitive to the doping concentration.

TL;DR: In this article, aggregate epitaxial carrot distributions are observed at the crystal, wafer and dislocation defect levels, instead of individual extended carrot defect level, from combining large volumes of data, carrots are observed when both threading screw dislocations (TSD) and BPD densities are locally high as seen in full wafer maps.