Journal ArticleDOI
Bulk Growth of Large Area SiC Crystals
Adrian Powell,Joseph John Sumakeris,Yuri I. Khlebnikov,Michael James Paisley,R.T. Leonard,Eugene Deyneka,Sumit Gangwal,Jyothi Ambati,Valeri F Tsevtkov,Jeff Seaman,Andy McClure,Chris Horton,Olek Kramarenko,Varad R. Sakhalkar,M. O’Loughlin,Albert A. Burk,Jianqiu Guo,Michael Dudley,Elif Balkas +18 more
TLDR
In this article, the growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined, and methods to increase the crystal diameters, and to turn these large diameter crystals into substrates that are ready for the epitaxial growth of SiC or other non homogeneous epitaxially layers are discussed.Abstract:
The growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined. Methods to increase the crystal diameters, and to turn these large diameter crystals into substrates that are ready for the epitaxial growth of SiC or other non homogeneous epitaxial layers are discussed. We review the present status of 150 mm and 200 mm substrate quality at Cree, Inc. in terms of crystallinity, dislocation density as well as the final substrate surface quality.read more
Citations
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Journal ArticleDOI
Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface
David J. Christle,Paul V. Klimov,Charles F. de las Casas,Krisztián Szász,Viktor Ivády,Viktor Ivády,Valdas Jokubavicius,Jawad ul Hassan,Mikael Syväjärvi,William F. Koehl,Takeshi Ohshima,Nguyen Tien Son,Erik Janzén,Adam Gali,Adam Gali,David D. Awschalom +15 more
Abstract: The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a high-fidelity spin-photon interface, which is a crucial prerequisite for such technologies, has not yet been demonstrated. Here, we demonstrate that such an interface exists in isolated divacancies in epitaxial films of 3C-SiC and 4H-SiC. Our data show that divacancies in 4H-SiC have minimal undesirable spin mixing, and that the optical linewidths in our current sample are already similar to those of recent remote entanglement demonstrations in other systems. Moreover, we find that 3C-SiC divacancies have a millisecond Hahn-echo spin coherence time, which is among the longest measured in a naturally isotopic solid. The presence of defects with these properties in a commercial semiconductor that can be heteroepitaxially grown as a thin film on Si shows promise for future quantum networks based on SiC defects. DOI:https://doi.org/10.1103/PhysRevX.7.021046 Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI. Published by the American Physical Society
Journal ArticleDOI
Recent advances in 4H-SiC epitaxy for high-voltage power devices
TL;DR: In this article, a single-wafer vertical-type epitaxial reactor is used to grow 150mm-diameter 4H-SiC epilayers, and high-speed wafer rotation is confirmed effective for enhancing growth rates and improving thickness and doping uniformities.
Journal ArticleDOI
X-ray diffraction and Raman characterization of β-Ga2O3 single crystal grown by edge-defined film-fed growth method
TL;DR: The crystallinity and wafer uniformity of (2 ¯ 01 ) and (010) oriented β-Ga2O3 substrates grown by edge-defined film-fed growth (EFG) were investigated by laboratory X-ray diffraction (XRD), synchrotron XRD, polarized Raman spectroscopy, and Raman mapping.
Journal ArticleDOI
Spatial variation of lattice plane bending of 4H-SiC substrates
TL;DR: In this paper, the authors measured the basal plane bending of on and off-axis 4H-SiC substrates by high-resolution X-ray diffractometry (HRXRD).
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